DiodesZetex 1 A NPN Transistor, 60 V, 3-Pin SOT-23 Surface Mount ZXTN2038FTA

DiodesZetex ZXTN2038FTA is a high-performance NPN bipolar transistor ideal for medium power switching and amplification applications. It supports a maximum continuous collector current of 1 ampere and collector-emitter voltage rating of 60 volts, making it suitable for a wide range of electronic circuits and embedded systems.

This transistor is housed in a 3-pin SOT-23 surface mount package, providing an optimal balance between compact size and thermal dissipation capabilities. The device is capable of dissipating 350 mW of power, which ensures stability and longevity during operation.

The ZXTN2038FTA transistor exhibits a wide operational temperature range from -55°C to 150°C, supporting robust performance even in harsh environmental conditions. It features a minimum DC current gain of 30 and a high transition frequency of 150 MHz, making it suitable for both analog and digital signal applications that require fast switching and reliable amplification.

Key electrical parameters include a maximum collector-base voltage of 80 volts and a maximum emitter-base voltage of 5 volts, providing additional voltage tolerance for complex circuit designs. The compact dimensions (3.04 mm length, 2.64 mm width, and 1.12 mm height) allow designers to conserve PCB space, beneficial for miniaturized devices.

This transistor is primarily used in applications such as industrial automation, automotive electronics, consumer electronic devices, and general-purpose switching circuits in telecommunications and control systems. Its surface mount package type makes it ideal for automated PCB assembly processes, enhancing production efficiency.

Overall, the DiodesZetex ZXTN2038FTA offers reliable and efficient performance for engineers requiring a versatile bipolar transistor with medium power specifications and compact packaging.

Designed for surface mount applications ensuring compact PCB layouts. Maximum collector current of 1 ampere supports moderate power switching needs. Maximum collector-emitter voltage of 60 volts enables operation in medium voltage circuits.

Small package dimensions of 3.04 mm length, 2.64 mm width, and 1.12 mm height optimize space saving. Superior power dissipation of up to 350 mW improves thermal handling in compact setups. High transition frequency of 150 MHz suitable for high-speed switching and amplifier circuits.

Wide operating temperature range from -55°C to 150°C ensures reliable performance in varying environments. Minimum DC current gain of 30 enabling efficient amplification characteristics. Three-pin configuration simplifies integration into discrete semiconductor designs.

Manufactured in China to strict quality standards assuring product consistency.

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