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DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.5mm
Length 5mm
Model ZXMHC6A07N8TC
Width 4mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202
Pin Count 8
Number of Elements per Chip 4
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 1.8A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 350mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.36W
Typical Gate Charge Qg @ Vgs 3.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.8V
Transistor Configuration Full Bridge

Key Features

  • Complementary enhancement mode MOSFET H-bridge configuration.
  • Maximum continuous drain current of 1.8 A.
  • Drain-source voltage of 60 V.
  • Low on-resistance at 350 milliohms.
  • Compact 8-pin SOIC surface-mount package (5 mm x 4 mm x 1.5 mm).
  • Temperature range from -55°C to +150°C.
  • Fast switching with typical gate charge of 3.2 nC.
  • Compliant with UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 standards.

Product Description

DiodesZetex ZXMHC6A07N8TC is a complementary enhancement mode power MOSFET configured as a full bridge H-bridge with 4 Type N and Type P-channel transistors in a compact 8-pin SOIC surface-mount package. This device supports a maximum continuous drain current of 1.8 A and a drain-source voltage rating of 60 V, making it suitable for power electronics switching and control applications.

Designed for efficient operation, it features a low maximum drain-source resistance of 350 milliohms, contributing to reduced power loss and heat dissipation. The MOSFET offers fast switching due to its typical gate charge of 3.2 nC, enhancing performance in switching power supplies, motor drivers, and other industrial electronic circuits.

The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, providing a compact footprint for high-density PCB layouts. Its operating temperature range spans from -55°C to +150°C, ensuring reliability in harsh and demanding environmental conditions.

This product complies with international standards including UL 94V-0, AEC-Q101, J-STD-020, RoHS, and MIL-STD-202, assuring quality and adherence to industry requirements. The maximum gate-source voltage rating of ±20 V guarantees robust gate control while maintaining device safety.

Typical applications for the ZXMHC6A07N8TC include power conversion, motor control, switched-mode power supplies, and industrial automation systems. Its complementary MOSFET design supports bidirectional current control in compact power stages.

Complementary enhancement mode MOSFET H-bridge configuration. Maximum continuous drain current of 1.8 A. Drain-source voltage of 60 V. Low on-resistance at 350 milliohms. Compact 8-pin SOIC surface-mount package (5 mm x 4 mm x 1.5 mm).

Temperature range from -55°C to +150°C. Fast switching with typical gate charge of 3.2 nC. Compliant with UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 standards. Manufactured in China with new condition. Explore the Electronics & Electricals category for similar Power MOSFETs and semiconductor components at EnvMart.

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC
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Frequently Asked Questions

The maximum continuous drain current for the ZXMHC6A07N8TC is 1.8 A.

This model has a drain-source voltage rating of 60 V.

The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.

The typical gate charge for the ZXMHC6A07N8TC is 3.2 nC.

The maximum drain-source resistance is 350 milliohms.

The operating temperature range spans from -55°C to +150°C.

This product complies with UL 94V-0, AEC-Q101, J-STD-020, RoHS, and MIL-STD-202 standards.

It features a complementary enhancement mode configuration with Type N and Type P-channel transistors.

The maximum gate-source voltage rating is ±20 V.

Typical applications include power conversion, motor control, switched-mode power supplies, and industrial automation systems.

The maximum power dissipation rating for the ZXMHC6A07N8TC is 1.36 W.

This device is designed for surface mounting.

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