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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5mm |
| Model | ZXMHC6A07N8TC |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 1.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.36W |
| Typical Gate Charge Qg @ Vgs | 3.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Full Bridge |
DiodesZetex ZXMHC6A07N8TC is a complementary enhancement mode power MOSFET configured as a full bridge H-bridge with 4 Type N and Type P-channel transistors in a compact 8-pin SOIC surface-mount package. This device supports a maximum continuous drain current of 1.8 A and a drain-source voltage rating of 60 V, making it suitable for power electronics switching and control applications.
Designed for efficient operation, it features a low maximum drain-source resistance of 350 milliohms, contributing to reduced power loss and heat dissipation. The MOSFET offers fast switching due to its typical gate charge of 3.2 nC, enhancing performance in switching power supplies, motor drivers, and other industrial electronic circuits.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, providing a compact footprint for high-density PCB layouts. Its operating temperature range spans from -55°C to +150°C, ensuring reliability in harsh and demanding environmental conditions.
This product complies with international standards including UL 94V-0, AEC-Q101, J-STD-020, RoHS, and MIL-STD-202, assuring quality and adherence to industry requirements. The maximum gate-source voltage rating of ±20 V guarantees robust gate control while maintaining device safety.
Typical applications for the ZXMHC6A07N8TC include power conversion, motor control, switched-mode power supplies, and industrial automation systems. Its complementary MOSFET design supports bidirectional current control in compact power stages.
Complementary enhancement mode MOSFET H-bridge configuration. Maximum continuous drain current of 1.8 A. Drain-source voltage of 60 V. Low on-resistance at 350 milliohms. Compact 8-pin SOIC surface-mount package (5 mm x 4 mm x 1.5 mm).
Temperature range from -55°C to +150°C. Fast switching with typical gate charge of 3.2 nC. Compliant with UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 standards. Manufactured in China with new condition. Explore the Electronics & Electricals category for similar Power MOSFETs and semiconductor components at EnvMart.
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