DiodesZetex Full Bridge 4 Type P, Type N-Channel Enhancement MOSFET 850 mA 100 V, 8-Pin SOIC ZXMHC10A07N8TC

DiodesZetex ZXMHC10A07N8TC is a full bridge complementary MOSFET device incorporating 4 transistors of type P and type N-channel in an 8-pin SOIC surface mount package. Designed for discrete semiconductor applications, it supports continuous drain currents up to 850 mA and withstands a maximum drain-source voltage of 100 V, making it suitable for power switching and motor control functions in industrial and electronic circuits.

The MOSFET features an enhancement mode channel configuration with a low maximum drain-source resistance of 1.45 milliohm, which ensures high efficiency and low conduction losses. Its typical gate charge of 2.9 nanocoulombs facilitates rapid switching, optimizing performance in applications requiring fast response times.

Its forward voltage of 0.95 V and robust operating temperature range from -55°C to +150°C make it reliable under various environmental conditions. Compact dimensions (5 mm length, 4 mm width, 1.5 mm height) and surface mount capability simplify PCB assembly, enhancing manufacturing efficiency.

The product conforms to stringent standards including RoHS, J-STD-020, AEC-Q101, MIL-STD-202, and UL 94V-0, ensuring quality, safety, and regulatory compliance in demanding industrial, electronic, and automotive applications.

Common use cases include power switching in electronic circuits, driving motors in industrial automation, signal amplification, and integration into power management systems. Its small size and full bridge configuration make it ideal for printed circuit boards in consumer electronics, automotive controls, and manufacturing equipment.

This MOSFET utilizes complementary enhancement mode transistors suitable for switching applications. The device supports a continuous drain current of 850 mA providing efficient power handling. Maximum drain-source voltage rating is 100 V ensuring robust performance under high voltage.

Low on-resistance of 1.45 milliohms minimizes power loss during conduction. Typical gate charge is low at 2.9 nanocoulombs enabling fast switching speeds. Forward voltage drop is 0.95 V for effective voltage regulation. Operates reliably within a temperature range from -55 to +150 degrees Celsius.

Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height allow easy surface mount installation. Compliance with RoHS, J-STD-020, AEC-Q101, MIL-STD-202, and UL 94V-0 standards assure quality and safety. Explore more MOSFET devices and complementary semiconductors by browsing the Electronics & Electricals category on EnvMart.