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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | DMP3030SN-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-59 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 700mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
DiodesZetex DMP3030SN-7 is a P-Channel MOSFET designed for semiconductor applications requiring precise switching and power management. This device supports a continuous drain current of 700 mA and switches up to a maximum drain-source voltage of 30 V with low drain-source resistance, enabling efficient performance in compact electronic assemblies.
Packaged in a 3-pin SC-59 surface mount package, this MOSFET is ideal for applications where board space is limited and reliable operation is critical. It operates in enhancement mode with a maximum drain-source resistance of 450 milliohms, reducing power loss and thermal output in typical use.
Designed for rigorous operating conditions, it withstands temperatures from -65°C to 150°C and complies with AEC-Q101 automotive standards, making it suitable for automotive and industrial electronic systems.
The device dissipates maximum power of 500 milliwatts and accommodates a gate-source voltage ranging from -20 V to +20 V, ensuring precise control in switching applications. Its negative forward voltage of -1.1 V further enhances switching efficiency.
The compact dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height enable integration into dense circuits without sacrificing performance. Originating from China, this MOSFET embodies quality semiconductor technology for discrete component electronics.
Operates with a maximum continuous drain current of 700 mA. Supports a maximum drain-source voltage of 30 V. Enhancement mode channel operation with 3-pin SC-59 package. Low on-resistance of 450 milliohms for efficiency.
Wide operating temperature range from -65°C to 150°C. Complies with AEC-Q101 automotive standard for reliability. Maximum power dissipation of 500 milliwatts. Compact sizing for dense electronic circuit designs.
This device is well suited for industrial, automotive, electronics manufacturing, and laboratory use where reliable P-channel MOSFETs are required. Explore our Electronics & Electricals category for more semiconductor components from trusted brands.
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