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DiodesZetex P-Channel MOSFET, 700 mA, 30 V, Enhancement Mode, Surface Mount, 3-Pin SC-59 Package DMP3030SN-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.3mm
Length 3.1mm
Model DMP3030SN-7
Width 1.7mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type SC-59
Minimum Operating Temperature -65°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 700mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 450mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.1V

Key Features

  • Operates at enhancement mode with a maximum drain-source resistance of 450 milliohms.
  • Compact 3-pin SC-59 package suitable for surface mounting.
  • Capable of dissipating up to 500 milliwatts of power during operation.
  • Temperature range supports operation from -65°C to 150°C.
  • Equipped with maximum gate-source voltage of -20V to +20V for robust switching.
  • Designed to meet AEC-Q101 automotive standards.
  • Features negative forward voltage of -1.1 volts enhancing switching efficiency.

Product Description

DiodesZetex DMP3030SN-7 is a P-Channel MOSFET designed for semiconductor applications requiring precise switching and power management. This device supports a continuous drain current of 700 mA and switches up to a maximum drain-source voltage of 30 V with low drain-source resistance, enabling efficient performance in compact electronic assemblies.

Packaged in a 3-pin SC-59 surface mount package, this MOSFET is ideal for applications where board space is limited and reliable operation is critical. It operates in enhancement mode with a maximum drain-source resistance of 450 milliohms, reducing power loss and thermal output in typical use.

Designed for rigorous operating conditions, it withstands temperatures from -65°C to 150°C and complies with AEC-Q101 automotive standards, making it suitable for automotive and industrial electronic systems.

The device dissipates maximum power of 500 milliwatts and accommodates a gate-source voltage ranging from -20 V to +20 V, ensuring precise control in switching applications. Its negative forward voltage of -1.1 V further enhances switching efficiency.

The compact dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height enable integration into dense circuits without sacrificing performance. Originating from China, this MOSFET embodies quality semiconductor technology for discrete component electronics.

Operates with a maximum continuous drain current of 700 mA. Supports a maximum drain-source voltage of 30 V. Enhancement mode channel operation with 3-pin SC-59 package. Low on-resistance of 450 milliohms for efficiency.

Wide operating temperature range from -65°C to 150°C. Complies with AEC-Q101 automotive standard for reliability. Maximum power dissipation of 500 milliwatts. Compact sizing for dense electronic circuit designs.

This device is well suited for industrial, automotive, electronics manufacturing, and laboratory use where reliable P-channel MOSFETs are required. Explore our Electronics & Electricals category for more semiconductor components from trusted brands.

DiodesZetex P-Channel MOSFET, 700 mA, 30 V, Enhancement Mode, Surface Mount, 3-Pin SC-59 Package DMP3030SN-7
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Frequently Asked Questions

This model supports a maximum continuous drain current of 700 mA.

It can switch up to a maximum drain-source voltage of 30 V.

The maximum drain-source resistance is 450 milliohms, which helps in reducing power loss.

It can dissipate a maximum power of 500 milliwatts during operation.

This unit operates within a temperature range of -65°C to 150°C.

The dimensions are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.

It is equipped with a maximum gate-source voltage of -20V to +20V.

Yes, it complies with AEC-Q101 automotive standards for reliability.

It is designed for surface mounting in a compact 3-pin SC-59 package.

This model features a P-channel type channel.

It has a negative forward voltage rating of -1.1 volts, enhancing switching efficiency.

It is well suited for industrial, automotive, electronics manufacturing, and laboratory use where reliable P-channel MOSFETs are required.

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