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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DMG3414U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMG3414U |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 37mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 780mW |
| Typical Gate Charge Qg @ Vgs | 9.6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1V |
DiodesZetex DMG3414U-7 is a high-performance N-channel enhancement mode MOSFET designed for compact electronic devices requiring efficient switching capabilities. It features a maximum continuous drain current of 4.2 amperes with a drain-source voltage rating of 20 volts, housed within a 3-pin SOT-23 surface mount package. This device is engineered for use in industrial, automotive, consumer electronics, and telecommunications applications where space and power efficiency are critical.
The MOSFET offers a low on-resistance of 37 milliohms, minimizing conduction losses and heat generation during operation. With a maximum power dissipation rating of 780 milliwatts, the component can reliably handle medium power levels. It supports a broad temperature range from -55°C to 150°C, making it suitable for harsh environments and automotive-grade applications, meeting the AEC-Q101 automotive standard.
Its typical gate charge of 9.6 nanocoulombs allows for fast switching and improved efficiency in pulse width modulation and power management circuits. The device's gate-source voltage tolerance of ±8 volts adds protection against voltage spikes. Its compact SOT-23 package measures approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height, allowing integration into densely packed PCBs.
Applications include industrial control equipment, automotive electronics, power regulation, and consumer electronics requiring low voltage and moderate current MOSFET solutions. The surface mount packaging facilitates automated assembly and production scalability.
Enhancement mode N-channel MOSFET for efficient switching. Supports up to 4.2 A drain current and 20 V drain-source voltage. Compact 3-pin SOT-23 surface mount package. Low Rds(on) resistance of 37 mΩ for minimal losses.
Maximum power dissipation rating of 780 mW. Wide operating temperature range: -55°C to 150°C. Typical gate charge of 9.6 nC for fast switching. Robust gate-source voltage tolerance up to ±8 V. Compliance with AEC-Q101 automotive standard.
Ideal for industrial, automotive, and consumer electronics. Explore EnvMart's broad selection of MOSFETs and semiconductors for your electronic design and manufacturing needs.
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