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DiodesZetex N-Channel MOSFET 4.6 A 20 V Enhancement 3-Pin SOT-23 DMN2058U-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMN2058U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMN2058U |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 91mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.13W |
| Typical Gate Charge Qg @ Vgs | 7.7nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 700mV |
Key Features
- This MOSFET features an enhancement mode channel for controlled switching.
- Maximum continuous drain current is rated at 4.6 A for reliable performance.
- Drain-source voltage up to 20 V supports moderate voltage applications.
- Maximum power dissipation of 1.13 W ensures thermal management in compact circuits.
- Package type SOT-23 allows surface mounting for space-saving PCB design.
- Typical gate charge of 7.7 nC enables efficient switching speeds.
- Operating temperature range from -55°C to 150°C supports automotive and industrial environments.
- Maximum drain-source resistance of 91 mΩ reduces power loss during conduction.
Product Description
DiodesZetex DMN2058U-7 is an N-Channel Enhancement mode MOSFET designed for surface mount applications with a 3-pin SOT-23 package. It is capable of handling a maximum continuous drain current of 4.6 A and a maximum drain-source voltage of 20 V, offering robust performance in moderate voltage and current circuits.
The device features a maximum power dissipation rating of 1.13 W, suitable for compact, power-sensitive applications. Its typical gate charge of 7.7 nC facilitates efficient switching, reducing loss and improving circuit responsiveness.
With a maximum drain-source resistance of 91 mΩ, the DMN2058U-7 minimizes conduction losses, enhancing energy efficiency. The device operates within a wide temperature range from -55°C up to 150°C, making it suitable for automotive and industrial environments.
This MOSFET complies with the automotive standard AEC-Q101, ensuring reliability and quality for automotive system implementations. The package's small dimensions (length 3 mm, width 1.4 mm, height 1 mm) support high-density PCB layouts.
The device is ideal for applications requiring efficient power switching, low losses, and reliable thermal performance in embedded systems, industrial control electronics, and automotive electronic units.
This MOSFET features an enhancement mode channel for controlled switching. Maximum continuous drain current is rated at 4.6 A for reliable performance. Drain-source voltage up to 20 V supports moderate voltage applications.
Maximum power dissipation of 1.13 W ensures thermal management in compact circuits. Package type SOT-23 allows surface mounting for space-saving PCB design. Typical gate charge of 7.7 nC enables efficient switching speeds.
Operating temperature range from -55°C to 150°C supports automotive and industrial environments. Maximum drain-source resistance of 91 mΩ reduces power loss during conduction. Compliant with Automotive Standard AEC-Q101 for automotive quality assurance.
Forward voltage of 700 mV and maximum gate-source voltage ±12 V enhances electrical stability. Explore our full catalog of MOSFETs and discrete semiconductors at EnvMart for industry-grade, quality-assured electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 4.6 A.
The maximum drain-source voltage for the DMN2058U-7 is 20 V.
The typical gate charge is 7.7 nC, which facilitates efficient switching speeds.
This MOSFET has a maximum power dissipation rating of 1.13 W.
The operating temperature range for the DMN2058U-7 is from -55°C to 150°C.
The dimensions of this model are 3 mm in length, 1.4 mm in width, and 1 mm in height.
This model comes in a SOT-23 package type, suitable for surface mounting.
The maximum drain-source resistance is 91 mΩ, which helps reduce power loss during conduction.
Yes, this MOSFET complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.
The channel type of this model is N-channel, designed for enhancement mode operation.
The maximum gate-source voltage is ±12 V, which enhances electrical stability.
This MOSFET is suitable for applications requiring efficient power switching and low conduction losses, particularly in embedded systems and automotive electronics.
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