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DiodesZetex N-Channel MOSFET 4.2 A 20 V Enhancement, 3-Pin SOT-23 DMN2075U-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMN2075U-7
Width 1.4mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 4.2A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 800mW
Typical Gate Charge Qg @ Vgs 7nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1V

Key Features

  • This MOSFET supports a maximum continuous drain current of 4.2 amperes.
  • It features a maximum drain source voltage rating of 20 volts.
  • Engineered with a surface mount SOT-23 package and 3 pins for compact PCB integration.
  • Maximum power dissipation is rated at 800 milliwatts, suitable for low power applications.
  • The device operates within temperatures from -55°C up to 150°C, ensuring reliability in harsh conditions.
  • With a maximum drain source resistance of 45 milliohms, it offers efficient conduction.
  • Typical gate charge is 7 nanocoulombs at gate-source voltage of 7 volts, enabling fast switching.
  • Conforms to Automotive Standard AEC-Q101 for automotive electronics usage.

Product Description

The DiodesZetex DMN2075U-7 is an N-Channel Enhancement mode MOSFET device designed for efficient power switching applications. Featuring a maximum continuous drain current of 4.2 A and a drain-source voltage rising to 20 V, it is suitable for a wide variety of low to medium power electronic circuits.

This device is housed in a compact 3-Pin SOT-23 surface mount package, making it ideal for modern PCB designs requiring size and performance. Typical applications include power management, switching regulators, and automotive electronic systems.

It offers a low drain-source resistance of 45 mΩ, which ensures minimal conduction losses and better efficiency. The maximum power dissipation of 800 mW allows operation within moderate power levels without overheating, supported further by the component's operational temperature range from -55°C to 150°C.

The gate characteristics, including a typical gate charge of 7 nC at Vgs=7V and maximum gate source voltage of ±8 V, ensure fast switching and enhanced control in switching circuits.

The device complies with the stringent automotive standard AEC-Q101, qualifying it for use in automotive electronic systems requiring high reliability and robustness.

Its physical dimensions - length of 3 mm, width of 1.4 mm, and height of 1.1 mm - allow compact board space utilization. The DiodesZetex DMN2075U-7 MOSFET is made in China, offering consistent quality and performance.

This MOSFET supports a maximum continuous drain current of 4.2 amperes. It features a maximum drain source voltage rating of 20 volts. Engineered with a surface mount SOT-23 package and 3 pins for compact PCB integration.

Maximum power dissipation is rated at 800 milliwatts, suitable for low power applications. The device operates within temperatures from -55°C up to 150°C, ensuring reliability in harsh conditions. With a maximum drain source resistance of 45 milliohms, it offers efficient conduction.

Typical gate charge is 7 nanocoulombs at gate-source voltage of 7 volts, enabling fast switching. Conforms to Automotive Standard AEC-Q101 for automotive electronics usage. Dimensions are compact with length 3mm, width 1.4mm, and height 1.1mm, allowing space-saving PCB designs.

Explore a broad range of MOSFET devices and other semiconductor components on EnvMart for your industrial and electronic design needs.

DiodesZetex N-Channel MOSFET 4.2 A 20 V Enhancement, 3-Pin SOT-23 DMN2075U-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.2 amperes.

This MOSFET features a maximum drain-source voltage rating of 20 volts.

It is housed in a surface mount SOT-23 package with 3 pins.

The maximum power dissipation is rated at 800 milliwatts.

This model operates within a temperature range of -55°C to 150°C.

The maximum drain-source resistance is 45 milliohms, ensuring efficient conduction.

The typical gate charge is 7 nanocoulombs at a gate-source voltage of 7 volts.

Yes, it conforms to Automotive Standard AEC-Q101, qualifying it for automotive electronics usage.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum gate-source voltage is ±8 volts.

This device features an N-channel enhancement mode.

The forward voltage is rated at 1 volt.

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