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Taiwan Semiconductor Silicon Junction Switching Diode Single 1 A 200 V 2-Pin Sub SMA ES1DL R2

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 1.43mm
Length 2.9mm
Model ES1DL R2
Width 1.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type Sub SMA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 950mV
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Designed for surface mount applications with a compact Sub SMA package.
  • Maximum forward current of 1 Ampere ensures effective rectification performance.
  • Capable of withstanding peak reverse repetitive voltage of 200 Volts.
  • Fast peak reverse recovery time of 35 nanoseconds supports rapid switching.
  • Operational temperature range from -55°C to 150°C suitable for various industrial conditions.
  • Low maximum forward voltage of 950 millivolts promotes energy efficiency.
  • Supports a peak non-repetitive forward surge current of 30 Amperes for transient conditions.

Product Description

Taiwan Semiconductor ES1DL R2 is a high-performance silicon junction switching diode designed for industrial and electronic component applications requiring reliable rectification and fast switching capabilities. It operates at a maximum forward current of 1 Ampere and can tolerate peak reverse repetitive voltages up to 200 Volts, packaged in a compact 2-pin Sub SMA surface mount format.

This diode demonstrates a fast peak reverse recovery time of 35 nanoseconds, ensuring efficient operation in switching circuits where speed is critical. Suitable for operation under harsh conditions, it supports a wide temperature range from -55°C to 150°C, making it ideal for industrial, manufacturing, and electronic control applications.

With a low maximum forward voltage of 950 millivolts, the ES1DL R2 contributes to energy-saving circuit designs and reduced power loss. It can handle peak non-repetitive forward surge currents of up to 30 Amperes, providing robust transient tolerance.

The physical compactness (2.9 mm length, 1.9 mm width, 1.43 mm height) facilitates seamless integration into densely packed printed circuit boards (PCBs), especially in power management and electronic component assemblies.

Compact surface mount Sub SMA package for automated assembly. Reliable 1 Ampere forward current for rectification tasks. High reverse voltage rating suitable for various power applications. Fast switching with 35 ns reverse recovery minimizes switching losses.

Wide operating temperature range for industrial environments. Low forward voltage drop for efficiency. High surge current capability for transient robustness. Small footprint dimensions enhance PCB layout efficiency.

This semiconductor diode is well suited for switching and rectifying functions in automotive systems, industrial machinery, power supplies, and consumer electronics. It fulfills the requirements of applications where quick response and reliability are essential.

Explore more Semiconductor Switching Diodes and other electronic components at EnvMart to enhance your electrical and electronic designs.

Taiwan Semiconductor Silicon Junction Switching Diode Single 1 A 200 V 2-Pin Sub SMA ES1DL R2
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Frequently Asked Questions

The maximum forward current of this model is 1 Ampere, ensuring effective rectification performance.

It can withstand a peak reverse repetitive voltage of up to 200 Volts, making it suitable for various power applications.

This diode is packaged in a compact 2-pin Sub SMA format, designed for surface mount applications.

The diode can handle a peak non-repetitive forward surge current of 30 Amperes for transient conditions.

It has a fast peak reverse recovery time of 35 nanoseconds, which supports rapid switching.

The operational temperature range is from -55°C to 150°C, making it suitable for various industrial conditions.

The dimensions are 2.9 mm in length, 1.9 mm in width, and 1.43 mm in height.

The maximum forward voltage drop is 950 millivolts, which promotes energy efficiency in circuit designs.

This model uses a single diode configuration, suitable for various electronic applications.

It is well suited for switching and rectifying functions in automotive systems, industrial machinery, power supplies, and consumer electronics.

The mounting type is surface mount, which facilitates automated assembly in electronic designs.

The country of origin for this diode is India.

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