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DiodesZetex P-Channel MOSFET 130 mA 50 V Enhancement Surface Mount 3-Pin SOT-23 BSS84-7-F

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DiodesZetex P-Channel MOSFET 130 mA 50 V Enhancement Surface Mount 3-Pin SOT-23 BSS84-7-F

Name: DiodesZetex P-Channel MOSFET 130 mA 50 V Enhancement Surface Mount 3-Pin SOT-23 BSS84-7-F
Brand: DiodesZetex
SKU: 223716
Price: 0.05 USD
Availability: InStock

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Category Discrete Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	BSS84-7-F
Width	1.4mm
Mount Type	Surface
Series	BSS84
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q100, AEC-Q101, AEC-Q104, AEC-Q200
Channel Type	Type P
Maximum Continuous Drain Current Id	130mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Typical Gate Charge Qg @ Vgs	0.59nC
Maximum Gate Source Voltage Vgs	-20, +20V
P-Channel MOSFET Transistor, 130 mA, 50 V, 3-Pin SOT-23 Diodes Inc BSS84TABrand	DiodesZetex

Key Features

This MOSFET features an enhancement mode channel for reliable switching.
Maximum power dissipation is 300 mW, supporting efficient operation.
Designed for operating temperatures from -55°C up to 150°C, ideal for harsh environments.
Pin count of 3 in a small and surface-mount SOT-23 package enhances PCB layout flexibility.
Maximum gate-source voltage ranges from -20 V to +20 V, providing robust control.
Typical gate charge is 0.59 nC, enabling fast switching performance.
Application suitable for electronic components, power management, and semiconductor projects.

Product Description

DiodesZetex BSS84-7-F is a P-Channel MOSFET transistor designed for efficient switching at low currents, with a maximum continuous drain current of 130 mA and a drain-source voltage rating of 50 V. The device employs an enhancement mode channel and is housed in a compact 3-pin SOT-23 package with surface mount capabilities, making it suitable for modern electronic circuit assemblies.

The MOSFET features a maximum power dissipation of 300 mW and a robust operating temperature range from -55°C to 150°C, ensuring reliable performance across diverse industrial and commercial applications. Its gate-source voltage tolerance of -20 V to +20 V provides strong control for switching applications, while the typical gate charge of 0.59 nC supports fast switching speeds conducive to high-frequency use.

With a physical size of approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height, this MOSFET is designed for space-constrained applications in electronic components, power management systems, signal amplification, and general semiconductor uses. The device also meets automotive standards including AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200, indicating suitability for automotive electronics subject to rigorous testing.

This MOSFET features an enhancement mode channel for reliable switching. Maximum continuous drain current of 130 mA supports low power applications. Maximum voltage rating of 50 V allows for medium voltage circuits. Compact 3-pin SOT-23 surface mount package.

Wide operating temperature range from -55°C to 150°C for durability. Typical gate charge of 0.59 nC enables efficient switching. Gate-source voltage limits of -20 V to +20 V for control stability. Complies with key automotive quality standards.

This MOSFET is ideal for use in electronics manufacturing, power supply circuits, industrial controls, automotive electronic systems, and other applications where compact, efficient semiconductor switches are required.

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