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Infineon ISP Type P-Channel MOSFET, 1.55 A, 100 V Enhancement Mode, 3-Pin SOT-223 ISP98DP10LMXTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 6.7mm
Length 7.3mm
Model ISP98DP10LMXTSA1
Width 1.8mm
Mount Type Surface
Series ISP
Maximum Operating Temperature 175°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1.55A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 4.2W
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Designed for battery management and load switch applications.
  • Enhancement mode device with fast switching capability.
  • Surface mount package with industry standard footprint.
  • Maximum power dissipation of 4.2 W and low typical gate charge of 3.5 nC.
  • Wide operating temperature range from -55°C to 175°C for reliable performance.
  • Maximum drain-source resistance Rds(on) of 2Ω ensuring efficiency at low loads.
  • Avalanche ruggedness for robust operation in demanding applications.
  • Suitable for industrial automation and reverse polarity protection.

Product Description

Infineon ISP98DP10LMXTSA1 is a P-Channel MOSFET optimized for battery management, load switching, and reverse polarity protection applications. It supports a maximum continuous drain current of 1.55 A and a maximum drain-source voltage of 100 V, operating in enhancement mode. The device comes in a compact 3-pin SOT-223 surface mount package, providing a reliable and industry-standard footprint.

This MOSFET features low Rds(on) of 2Ω, which improves efficiency, especially at low load conditions, due to a low typical gate charge of 3.5 nC. Its robust construction ensures avalanche ruggedness, contributing to long-term reliability in industrial automation and demanding environments. The wide operational temperature range of -55°C to 175°C makes it well-suited for automotive and industrial applications.

The device's dimensions are 7.3 mm in length, 6.7 mm in height, and 1.8 mm in width, allowing for compact PCB layouts. The maximum power dissipation is rated at 4.2 W, ensuring safe thermal performance in moderate load scenarios. Its maximum gate-source voltage rating is 20 V, with a forward voltage of 1.2 V, balancing performance and durability.

Designed for battery management and load switch applications. Enhancement mode device with fast switching capability. Surface mount package with industry standard footprint. Maximum power dissipation of 4.2 W and low typical gate charge of 3.5 nC.

Wide operating temperature range from -55°C to 175°C for reliable performance. Maximum drain-source resistance Rds(on) of 2Ω ensuring efficiency at low loads. Avalanche ruggedness for robust operation in demanding applications.

Suitable for industrial automation and reverse polarity protection. Compact dimensions: 7.3 mm length x 6.7 mm height x 1.8 mm width.

This Infineon MOSFET is ideal for use in electronic industries including automotive, industrial automation, power management circuits, and consumer electronics, offering reliable performance in high and low switching frequency environments.

Browse more advanced semiconductor components and MOSFETs at EnvMart for your industrial and electronic design needs.

Infineon ISP Type P-Channel MOSFET, 1.55 A, 100 V Enhancement Mode, 3-Pin SOT-223 ISP98DP10LMXTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.55 A.

It has a maximum drain-source voltage rating of 100 V.

The typical gate charge is 3.5 nC.

The dimensions are 7.3 mm in length, 6.7 mm in height, and 1.8 mm in width.

The maximum power dissipation is rated at 4.2 W.

It operates within a temperature range of -55°C to 175°C.

The maximum gate-source voltage rating is 20 V.

The maximum drain-source resistance Rds(on) is 2Ω.

It comes in a 3-pin SOT-223 surface mount package.

This model is designed for battery management, load switching, and reverse polarity protection applications.

It features a low Rds(on) of 2Ω, which improves efficiency, especially at low load conditions.

The channel type is P-Channel, and it operates in enhancement mode.

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