Infineon ISP Type P-Channel MOSFET, 1.55 A, 100 V Enhancement, 3-Pin SOT-223 ISP98DP10LMXTSA1

The Infineon ISP98DP10LMXTSA1 is a P-Channel MOSFET designed for medium and low power industrial and electronic applications. It features a maximum continuous drain current of 1.55 A and withstands a maximum drain-source voltage of 100 V, operating in enhancement mode to enable simple integration into battery management, load switching, and reverse polarity protection circuits.

Housed in a compact 3-pin SOT-223 surface mount package, this MOSFET offers a low Rds(on) of 2 Ω, which aids in reducing conduction losses and improving overall system efficiency. Its maximum power dissipation of 4.2 W ensures sustained operation under typical industrial conditions with a broad temperature tolerance ranging from -55°C to 175°C, making it suitable for harsh environments.

With a typical gate charge of 3.5 nC at the gate-source voltage and a forward voltage rating of 1.2 V, the ISP98DP10LMXTSA1 delivers fast switching speeds and reliable performance. This device provides avalanche ruggedness and robust reliability essential for industrial automation, battery management systems, and load protection mechanisms.

The MOSFET does not carry automotive certification but is built on Infineon’s OptiMOS™ technology, promising enhanced efficiency and durability. Its industry-standard footprint simplifies circuit design and upgrade paths. The product is manufactured to new condition standards and originates from India.

Type P channel in enhancement mode for easier design integration. Maximum continuous drain current of 1.55 A ensures reliable medium power handling. Maximum drain-source voltage of 100 V suitable for switching and load applications.

Surface mount package SOT-223 enables compact PCB layouts. Low Rds(on) of 2 Ω for energy efficiency and minimal heat dissipation. Maximum power dissipation of 4.2 W supports thermal stability in use. Wide operating temperature range from -55°C to 175°C for demanding environments.

Typical gate charge of 3.5 nC enables fast switching performance. Robust forward voltage rating of 1.2 V enhances device reliability. Ideal for battery management, load switches, and reverse polarity protection.

This Infineon ISP Type P-Channel MOSFET is designed to meet industrial, automation, and power management needs with reliable performance and durability. Suitable for manufacturing, electronics design, laboratory testing, and commercial electronics applications.

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