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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.41mm |
| Model | SUM55P06-19L-E3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SUM55P06-19L |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Vishay SUM55P06-19L-E3 is a P-Channel MOSFET designed for efficient power switching and amplification in electronic devices. It operates with a continuous drain current of up to 55 A and can sustain a drain-source voltage of 60 V. The device is housed in a TO-263 package with a surface mount design and 3 pins, enabling compact and reliable PCB assembly.
This MOSFET features enhancement mode operation, providing low on-resistance with a maximum Rds(on) of 19 milliohms to minimize conduction losses. With a power dissipation capacity of 3.75 W, it supports high-performance applications in power management modules, industrial power supplies, and electronic control units.
The component functions effectively across a broad temperature range, from -55°C for cold environments up to 175°C for elevated thermal conditions, ensuring robustness and reliability in harsh industrial or automotive scenarios. The typical gate charge is 76 nC at standard gate voltages, which contributes to fast switching capabilities.
The maximum gate-source voltage tolerance of -20 V to +20 V allows flexible control voltage margins without damaging the device. Additionally, the forward voltage drop is rated at -1.5 V, aiding in efficient energy conversion and reducing heat generation in circuits.
Physical dimensions of this MOSFET are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height, facilitating integration into space-constrained electronic designs. The device complies with standard semiconductor quality expectations but does not carry specific automotive or industry certifications.
Designed for surface mount assembly with 3-pin TO-263 package. High continuous drain current capacity of 55 A for power applications. Maximum drain-source voltage of 60 V suits a wide range of electronic circuits. Low maximum drain-source resistance supports efficient power switching.
Capable of 3.75 W power dissipation for thermal reliability. Operates reliably over a wide temperature span from -55°C to 175°C. Gate-source voltage rating from -20 V to +20 V improves control flexibility. Compact dimensions enable integration in tight PCB layouts.
Suitable for industrial, power management, and electronic component applications.
This product is ideal for engineers and manufacturers working in semiconductor devices, power electronics, and industrial electronics design. Vishay's MOSFET technology ensures high quality and dependable performance for varied electrical and electronic equipment.
Explore more Vishay semiconductors and MOSFETs on EnvMart for advanced circuit solutions and reliable components for electronic assemblies.
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