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Vishay P-Channel MOSFET 55 A, 60 V, Enhancement Mode, 3-Pin TO-263 Package SUM55P06-19L-E3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 4.83mm
Length 10.41mm
Model SUM55P06-19L-E3
Width 9.65mm
Mount Type Surface
Series SUM55P06-19L
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 55A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 19mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.75W
Typical Gate Charge Qg @ Vgs 76nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.5V

Key Features

  • Designed for surface mount applications with 3 pins in a TO-263 form factor.
  • Features an enhancement mode channel operating at high efficiency.
  • Maximum drain-source resistance of 19 milliohms ensures low power loss.
  • Capable of dissipating up to 3.75 watts of power in operation.
  • Wide operating temperature range from -55°C up to 175°C for industrial suitability.
  • Typical gate charge of 76 nanocoulombs at rated gate voltage.
  • Can tolerate gate-source voltage ranging from -20 V to +20 V for robust control.
  • Compact size with dimensions approximately 10.41 mm length, 9.65 mm width, and 4.83 mm height.

Product Description

Vishay SUM55P06-19L-E3 is a P-Channel MOSFET designed for efficient power switching and amplification in electronic devices. It operates with a continuous drain current of up to 55 A and can sustain a drain-source voltage of 60 V. The device is housed in a TO-263 package with a surface mount design and 3 pins, enabling compact and reliable PCB assembly.

This MOSFET features enhancement mode operation, providing low on-resistance with a maximum Rds(on) of 19 milliohms to minimize conduction losses. With a power dissipation capacity of 3.75 W, it supports high-performance applications in power management modules, industrial power supplies, and electronic control units.

The component functions effectively across a broad temperature range, from -55°C for cold environments up to 175°C for elevated thermal conditions, ensuring robustness and reliability in harsh industrial or automotive scenarios. The typical gate charge is 76 nC at standard gate voltages, which contributes to fast switching capabilities.

The maximum gate-source voltage tolerance of -20 V to +20 V allows flexible control voltage margins without damaging the device. Additionally, the forward voltage drop is rated at -1.5 V, aiding in efficient energy conversion and reducing heat generation in circuits.

Physical dimensions of this MOSFET are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height, facilitating integration into space-constrained electronic designs. The device complies with standard semiconductor quality expectations but does not carry specific automotive or industry certifications.

Designed for surface mount assembly with 3-pin TO-263 package. High continuous drain current capacity of 55 A for power applications. Maximum drain-source voltage of 60 V suits a wide range of electronic circuits. Low maximum drain-source resistance supports efficient power switching.

Capable of 3.75 W power dissipation for thermal reliability. Operates reliably over a wide temperature span from -55°C to 175°C. Gate-source voltage rating from -20 V to +20 V improves control flexibility. Compact dimensions enable integration in tight PCB layouts.

Suitable for industrial, power management, and electronic component applications.

This product is ideal for engineers and manufacturers working in semiconductor devices, power electronics, and industrial electronics design. Vishay's MOSFET technology ensures high quality and dependable performance for varied electrical and electronic equipment.

Explore more Vishay semiconductors and MOSFETs on EnvMart for advanced circuit solutions and reliable components for electronic assemblies.

Vishay P-Channel MOSFET 55 A, 60 V, Enhancement Mode, 3-Pin TO-263 Package SUM55P06-19L-E3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SUM55P06-19L-E3 is 55 A.

This model can sustain a maximum drain-source voltage of 60 V.

It is capable of dissipating up to 3.75 watts of power in operation.

The dimensions of the TO-263 package are approximately 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height.

The typical gate charge at the rated gate voltage is 76 nanocoulombs.

This model can tolerate a gate-source voltage ranging from -20 V to +20 V.

The maximum drain-source resistance is 19 milliohms.

The operating temperature range for this device is from -55°C to 175°C.

This MOSFET features a P-channel type channel with enhancement mode operation.

It is suitable for applications in power management modules, industrial power supplies, and electronic control units.

The forward voltage drop is rated at -1.5 V.

The TO-263 package has 3 pins.

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