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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | BCX38C |
| Mount Type | Through Hole |
| Series | BXC38C |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 800mA |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 5000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 100nA |
| Maximum Power Dissipation Pd | 1W |
| DiodesZetex 1 Darlington Transistor NPN, 800 mA 60 V HFE | 5000, 3-Pin TO-92 |
DiodesZetex BCX38C is a 1 Darlington NPN Transistor designed for electronic circuits requiring high current gain and moderate voltage capacity. It supports a maximum continuous collector current of 800 mA and can tolerate collector emitter voltages up to 60 V. Packaged in a compact 3-pin TO-92 form factor, this transistor is suitable for through-hole mounting on various printed circuit boards.
With a minimum DC current gain (hFE) of 5000, the BCX38C provides significant amplification, making it ideal for use in switching, amplification, and signal processing applications. It offers robust thermal performance with an operating temperature range between -55°C and 200°C and supports up to 1 W power dissipation efficiently.
The transistor features an NPN polarity and a maximum collector base voltage of 80 V, ensuring versatile usage in electronic design and development. The maximum emitter base voltage is rated at 10 V, and the device maintains a low collector cut-off current of 100 nA for minimized leakage current.
Its compact dimensions, including a height of 4.01 mm and length of 4.77 mm, complement its suitability for space-constrained applications. The device does not carry specific automotive or standardized approvals but remains compliant with typical industry standards for discrete semiconductor components.
Maximum Continuous Collector Current Ic of 800 mA. Maximum Collector Emitter Voltage Vceo of 60 V. TO-92 package type with through-hole mount. High current gain hFE min 5000. Operating temperature from -55°C to 200°C. Maximum Power Dissipation Pd 1 W.
NPN transistor polarity. Low collector cut-off current of 100 nA.
This Darlington transistor is highly suitable for industrial, electronic component manufacturing, and laboratory applications requiring robust amplification and switching reliability. It is widely used in prototype development and mass production of electronic devices.
Browse the Electronics & Electricals > Semiconductor > Darlington Transistor category for more components like the BCX38C from DiodesZetex on EnvMart.
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