$0.67
$0.65
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay Type P-Channel MOSFET, 8-Pin SOIC, 8.1 A Drain Current, 30 V, 2.5 W Power Dissipation SI4435DDY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4435DDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4435DDY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This surface mount device features a low drain-source resistance of 24 milliohms.
- It operates in enhancement mode for efficient switching performance.
- Maximum power dissipation is rated at 2.5 watts for reliable thermal handling.
- Typical gate charge is 32 nanocoulombs at standard gate-source voltage.
- Designed to operate across a temperature range from -55°C to 150°C.
- The device has a compact form factor with dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
- Maximum gate-source voltage rating is ±20 V, providing robust gate protection.
- Forward voltage drop is approximately -1.2 V for efficient conduction.
Product Description
Vishay SI4435DDY-T1-GE3 is a high-performance Type P-Channel MOSFET designed for surface mount technology applications. It supports a maximum continuous drain current of 8.1 A and a drain-source voltage of 30 V, packaged in a compact 8-pin SOIC form factor suitable for dense PCB layouts.
This MOSFET operates in enhancement mode and features a low drain-source resistance of 24 milliohms, minimizing conduction losses and enhancing efficiency in power switching circuits. It is capable of dissipating up to 2.5 watts of power, supporting demanding load conditions.
The device's typical gate charge of 32 nC allows fast switching, and the maximum gate-source voltage rating of ±20 V ensures reliable gate operation and protection. With a forward voltage drop near -1.2 V, it offers efficient conduction with low voltage loss.
Operating reliably in temperature ranges from -55°C to 150°C, this component suits harsh industrial, automotive, and commercial electronics environments. Its physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height enable compact design integration.
This P-Channel MOSFET is ideal for applications including power management circuits, switching regulators, load switching, and other electronic semiconductor uses requiring efficient current control.
Surface mount 8-pin SOIC package ensures ease of PCB assembly. Low Rds(on) reduces power loss and thermal buildup. Wide operating temperature range supports diverse environmental conditions. Robust gate voltage tolerance enhances device reliability.
Compact size supports high-density circuit designs.
Explore the full range of MOSFETs from Vishay and discover components designed to meet demanding semiconductor needs in industrial, automotive, and electronic manufacturing sectors with EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 8.1 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It can dissipate up to 2.5 watts of power.
The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge is 32 nanocoulombs at standard gate-source voltage.
The maximum gate-source voltage rating is ±20 V.
This model uses surface mount technology.
The forward voltage drop is approximately -1.2 V.
It operates reliably across a temperature range from -55°C to 150°C.
The maximum drain-source resistance is rated at 24 milliohms.
This model features a Type P channel.
It is suitable for applications such as power management circuits, switching regulators, and load switching.
Related Products
Other Products from this brand
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$0.30
$0.29
-3%
New
$0.67
$0.65
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent