Vishay Type P-Channel MOSFET, 4.5 A Drain Current, 30 V Drain Source Voltage, 6-Pin PowerPAK SC-75 Package SIB4317EDK-T1-GE3

Vishay SIB4317EDK-T1-GE3 is a robust Type P-Channel MOSFET designed for electronic power management in devices requiring surface mount components. Featuring a maximum continuous drain current of 4.5 A and drain-source voltage rating of 30 V, this MOSFET operates reliably in low voltage power circuits.

The device is housed in a compact 6-pin PowerPAK SC-75 surface mount package with dimensions of 1.6 mm by 1.6 mm, making it ideal for space-constrained applications such as portable devices, including smartphones, tablet PCs, and mobile computing units.

The MOSFET offers a low drain-source resistance of 0.065 ohms, improving efficiency by reducing conduction losses. Its typical gate charge of 6.6 nC at the gate-source voltage enables fast switching speeds appropriate for high-frequency applications.

Designed to perform under extreme temperatures, the component supports operating temperatures ranging from -55°C to 150°C. The maximum power dissipation rating of 1 W ensures thermal stability during operation, while the maximum gate-source voltage of 12 V provides safety margin for gate drive circuits.

This semiconductor component complies with RoHS environmental standards, ensuring it meets regulatory requirements for hazardous substances. Additionally, it features typical electrostatic discharge (ESD) protection of 1500 V (Human Body Model), safeguarding the device against electrostatic damage during handling and assembly.

Maximum continuous drain current of 4.5 A for robust power handling. Drain-source voltage rating of 30 V suitable for low voltage electronic circuits. Compact 6-pin PowerPAK SC-75 surface mount package for space-efficient PCB layouts.

Low on-resistance of 0.065 ohms enhances efficiency and reduces thermal stress. Fast switching capability with gate charge of 6.6 nC at Vgs. Wide temperature operating range from -55°C to 150°C supports industrial and commercial environments.

Maximum power dissipation capacity of 1 W ensures reliable thermal management. Maximum gate-source voltage rating of 12 V for protection against voltage spikes. RoHS compliant for safe and environmentally responsible use.

Reliable ESD protection rating of 1500 V (HBM) to protect against static shocks.

This MOSFET is suited for industrial, consumer electronics, and portable device applications requiring efficient power switching and control. It is commonly used in power management circuits, battery-powered electronics, and compact embedded systems. For further selection and integration, refer to Vishay's detailed datasheets and technical documents.

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