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Vishay N-Channel MOSFET 100 V, 4.3 A, 25 W Power Dissipation, 3-Pin IPAK TO-251 IRLU110PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRLU110PBF |
| Width | 2.38mm |
| Mount Type | Through Hole, Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK (TO-251) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.76Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 6.1nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 2.5V |
Key Features
- High maximum continuous drain current of 4.3 A ensures reliable power handling.
- Maximum drain-source voltage rating of 100 V supports medium voltage applications.
- Compact 3-pin IPAK (TO-251) package allows for through-hole and surface mounting.
- Low maximum drain-source resistance of 0.76 Ω improves efficiency.
- Maximum power dissipation of 25 W supports moderate thermal loads.
- Wide operating temperature range from -55°C to 150°C ensures durability.
- Maximum gate-source voltage ranges from -10 V to +10 V for flexible driving.
- Compliance with Halogen Free, IEC 61249-2-21, JEDEC JS709A, and RoHS Directive 2002/95/EC standards.
Product Description
Vishay IRLU110PBF N-Channel MOSFET is designed for efficient switching applications with a continuous drain current of 4.3 A and a maximum drain-source voltage rating of 100 V. It features an enhancement mode channel in a compact 3-pin IPAK (TO-251) package suitable for both through-hole and surface mounting techniques.
This MOSFET delivers low on-resistance of 0.76 Ω, enabling energy-efficient operation and reduced heat dissipation. It can safely dissipate up to 25 W of power, making it ideal for medium power electronic devices and circuits.
The device operates reliably across a broad temperature range from -55°C up to 150°C, supporting demanding environments. The maximum gate-source voltage is rated at ±10 V, facilitating robust gate control and switching efficiency. With a typical gate charge of 6.1 nC, it exhibits good switching speed characteristics.
Compliance with modern environmental and safety standards, including Halogen Free per IEC 61249-2-21, JEDEC JS709A, and RoHS Directive 2002/95/EC, makes this MOSFET suitable for green and regulatory-compliant applications.
The compact physical dimensions (width 2.38 mm, height 6.22 mm, length 6.73 mm) enable use in space-constrained designs across industrial, consumer electronics, automotive (although this variant is not automotive certified), power supply, and control systems.
High current rating ensures suitability for power management. Medium voltage rating supports a variety of circuits and loads. Small form factor reduces PCB footprint. Robust construction ensures long-term reliability. Wide operating temperature range for versatile applications.
Industry-standard package and mounting options. Environmentally compliant materials and standards.
Discover more quality semiconductor components under Vishay's portfolio in EnvMart for reliable performance and seamless integration in your electronic projects and industrial solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.3 A.
It has a maximum drain-source voltage rating of 100 V, making it suitable for medium voltage applications.
This MOSFET comes in a compact 3-pin IPAK (TO-251) package, which allows for both through-hole and surface mounting.
The maximum power dissipation for this MOSFET is 25 W, supporting moderate thermal loads.
The maximum gate-source voltage for this device ranges from -10 V to +10 V, providing flexibility in driving.
It operates reliably across a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance is 0.76 Ω, which helps improve efficiency.
The dimensions of this model are 6.73 mm in length, 2.38 mm in width, and 6.22 mm in height.
The typical gate charge at Vgs is 6.1 nC, indicating good switching speed characteristics.
Yes, it complies with Halogen Free, IEC 61249-2-21, JEDEC JS709A, and RoHS Directive 2002/95/EC standards.
This model features an enhancement mode N-channel.
It is suitable for various applications including power management, consumer electronics, and control systems.
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