Vishay N-Channel MOSFET 150 A 40 V Enhancement 3-Pin TO-263 SUM40012EL-GE3

Vishay SUM40012EL-GE3 is a robust N-Channel MOSFET designed to handle continuous drain currents up to 150 A and a drain-source voltage of 40 V. Its 3-Pin TO-263 surface mount package offers easy integration into power management systems and industrial electronic applications.

Equipped with TrenchFET® technology, the device ensures low RDS(on) and gate charge characteristics, significantly reducing power losses during conduction and switching phases. This results in enhanced efficiency and thermal performance, suitable for demanding power electronics, motor control, and inverter circuits.

The MOSFET operates reliably in extreme temperature ranges from -55°C up to 175°C junction temperature, making it suitable for automotive and industrial environments. Its compact package size allows for space-efficient PCB layouts without compromising on power handling capability.

Key features of the SUM40012EL-GE3 include a typical gate charge of 130 nC at specified gate voltage, maximum power dissipation rating of 150 W, and a maximum gate-source voltage of ±20 V. Forward voltage is maintained at a low 1.5 V ensuring minimal voltage drop and enhanced switching speed. The device's 2.2 milliohm drain-source resistance supports high current conduction with low losses.

This MOSFET is ideal for use in power supplies, DC-DC converters, motor drives, and other industrial power control applications requiring high efficiency and reliability. This MOSFET features a low maximum drain-source resistance of 2.2mΩ enabling high efficiency.

The device operates with a maximum power dissipation of 150 W suitable for demanding applications. Maximum operating temperature reaches 175°C, supporting high thermal reliability. Typical gate charge of 130 nC facilitates fast switching performance.

The enhancement mode channel type supports efficient power management in electronic circuits. Compact dimensions of 10.41 mm length, 9.65 mm width, and 4.57 mm height ensure easy PCB integration. Voltage specifications include a maximum gate-source voltage of ±20 V and a forward voltage of 1.5 V.

Minimum operating temperature is -55°C, allowing operation in harsh environments. Designed using TrenchFET® technology for reduced conduction and switching losses. Explore Vishay MOSFETs for reliable semiconductor solutions at EnvMart.

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