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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP450LCPBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 74nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
| N-channel MOSFET,IRFP450LC 16A 500VBrand | Vishay |
The Vishay IRFP450LCPBF is a high-performance N-Channel MOSFET designed for power and switching applications requiring reliable operation at up to 14 A continuous drain current and 500 V drain-source voltage. Its enhancement-mode operation provides efficient control in power electronics circuits. This MOSFET is packaged in a TO-247 through-hole format with three pins, making it suitable for robust mounting and easy integration into power supply, motor control, and industrial automation systems.
Capable of dissipating up to 190 W, the IRFP450LCPBF supports demanding conditions and features a maximum drain-source resistance of 400 milliohms to minimize conduction losses. Its gate characteristics include a typical gate charge of 74 nC at the specified gate voltage and a maximum gate-source voltage rating of ±30 V, ensuring effective switching control and protection against voltage spikes.
The device operates reliably across a broad temperature range from -55°C to 150°C, accommodating harsh industrial and commercial environments. The compact physical dimensions (length: 15.87 mm, height: 20.7 mm, width: 5.31 mm) allow flexibility in PCB layouts while maintaining thermal and mechanical stability.
Applications for the IRFP450LCPBF include power switching, motor drives, DC-DC converters, and other electronic circuits requiring high voltage and current handling capabilities. It is a robust choice for engineers designing electronic control systems in industrial, automotive, and consumer electronics sectors.
The MOSFET supports a maximum power dissipation of 190 W, suitable for high power applications. It features a low maximum drain-source resistance of 400 milliohms for efficient switching. Operational temperature ranges from -55°C to a maximum of 150°C, allowing use in diverse environments.
The device is designed for through-hole mounting with a compact length of 15.87 mm and height of 20.7 mm. Typical gate charge is 74 nC at the specified gate-source voltage, ensuring responsive switching. Maximum gate-source voltage tolerates -30 V to +30 V to protect gate integrity.
The forward voltage drop is 1.4 V, contributing to low conduction losses. Pin count is 3, adhering to the standard TO-247 package configuration. Explore Vishay brand power MOSFETs and related semiconductor components at EnvMart for your industrial, automotive, and electronic design requirements.
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