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Vishay N-Channel Power MOSFET, 15 A Continuous Drain Current, 100 V Drain Source Voltage, Enhancement Mode, 3-Pin IRL530PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRL530PBF
Width 4.7mm
Mount Type Through Hole
Series IRL
Maximum Operating Temperature 175°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 15A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 0.16Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 88W
Typical Gate Charge Qg @ Vgs 28nC
Maximum Gate Source Voltage Vgs -10, +10V
Forward Voltage Vf 2.5V

Key Features

  • This MOSFET operates in enhancement mode with low drain-source resistance of 0.16 ohms.
  • It offers a maximum power dissipation rating of 88 W for high power applications.
  • The gate charge is typically 28 nC at a gate-source voltage of 10 V for efficient switching.
  • Maximum operating temperature is rated at 175°C, with an operating range from -55°C to 175°C.
  • Designed with a forward voltage drop of 2.5 V, optimizing energy efficiency.
  • Features RoHS compliance for environmental safety.
  • Ideal for industrial electronic and power management circuits requiring reliable high current switching.

Product Description

Vishay IRL530PBF is a high-performance N-Channel Power MOSFET optimized for power electronics applications in industrial, electronic component, and power management fields. It supports a continuous drain current of 15 A and a maximum drain-source voltage of 100 V. Housed in a robust 3-pin TO-220AB package, it is suitable for through-hole mounting and provides efficient thermal management.

This enhancement mode MOSFET features a low on-resistance of 0.16 ohms which minimizes conduction losses and improves overall power efficiency. It delivers a maximum power dissipation capability of 88 W, making it suitable for high power applications.

The device has a typical gate charge of 28 nC at 10 V gate-source voltage, facilitating fast switching and reduced switching losses. Operating temperatures range from -55°C to 175°C, ensuring reliable function under harsh environmental conditions.

Vishay’s design also includes a forward voltage drop of 2.5 V to optimize performance in circuits requiring efficient power transfer. Being RoHS compliant, this MOSFET supports environmentally friendly manufacturing standards.

This MOSFET is engineered for industrial applications including power supplies, motor control, and switching regulators. Its compact TO-220AB package allows easy integration and enhanced heat dissipation. Ideal for electronic engineering projects demanding high current switching and robust performance.

Typical applications include power electronics systems, voltage regulation, and industrial automation circuits. Device specifications support design flexibility with high voltage and current ratings. Explore additional Vishay semiconductor products at EnvMart for efficient and reliable electronic component solutions.

Vishay N-Channel Power MOSFET, 15 A Continuous Drain Current, 100 V Drain Source Voltage, Enhancement Mode, 3-Pin IRL530PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 15 A.

This unit has a maximum drain-source voltage rating of 100 V.

It features a low on-resistance of 0.16 ohms, which helps minimize conduction losses.

The device is housed in a TO-220AB package, suitable for through-hole mounting.

The operating temperature range is from -55°C to 175°C.

The typical gate charge at a gate-source voltage of 10 V is 28 nC.

It has a maximum power dissipation capability of 88 W, making it suitable for high power applications.

The forward voltage drop is rated at 2.5 V, optimizing energy efficiency in circuits.

Yes, this model is RoHS compliant, supporting environmentally friendly manufacturing standards.

This device features an N-channel configuration, which is typical for enhancement mode MOSFETs.

The dimensions of this MOSFET are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

It is engineered for industrial applications including power supplies, motor control, and switching regulators.

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