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DiodesZetex P-Channel MOSFET Type BSS84W-7-F, 130 mA, 50 V, Enhancement Mode, 3-Pin SC-70 Package

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DiodesZetex P-Channel MOSFET Type BSS84W-7-F, 130 mA, 50 V, Enhancement Mode, 3-Pin SC-70 Package

Name: DiodesZetex P-Channel MOSFET Type BSS84W-7-F, 130 mA, 50 V, Enhancement Mode, 3-Pin SC-70 Package
Brand: DiodesZetex
SKU: 217475
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	BSS84W-7-F
Width	1.35mm
Mount Type	Surface
Series	BSS84W
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101, AEC-Q100, AEC-Q200
Channel Type	Type P
Maximum Continuous Drain Current Id	130mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200mW
Typical Gate Charge Qg @ Vgs	0.59nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Operates with a maximum continuous drain current of 130 mA.
Supports a maximum drain-source voltage of 50 V for robust switching applications.
Utilizes enhancement mode channel operation for efficient power management.
Packaged in a small SC-70 surface-mount 3-pin form factor suitable for compact electronics.
Maximum power dissipation of 200 mW enables reliable thermal performance.
Wide operating temperature range from -55 °C to 150 °C ensures versatility in various environments.
Features a maximum drain-source resistance of 10 Ω for low conduction losses.
Gate charge typical value of 0.59 nC supports fast switching speed.

Product Description

DiodesZetex BSS84W-7-F is a P-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It supports a maximum continuous drain current of 130 mA and a drain-source voltage up to 50 V. The device operates in enhancement mode, providing excellent control in power management applications. Its small SC-70 surface-mount package with three pins makes it well-suited for compact and portable electronic devices.

The MOSFET features a maximum power dissipation of 200 mW and a low drain-source resistance of 10 Ω, which helps maintain efficiency and reduce heat generation. The device can operate reliably in extreme temperatures ranging from -55 °C to 150 °C, making it adaptable for automotive and industrial environments.

Typical gate charge of 0.59 nC at gate-source voltage provides fast switching capabilities. The package dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allowing for space-saving layouts in modern electronic designs. Additionally, it meets automotive industry standards including AEC-Q101, AEC-Q100, and AEC-Q200, underscoring its reliability and quality.

Operates with a maximum continuous drain current of 130 mA. Supports a maximum drain-source voltage of 50 V. Enhancement mode channel for effective switching. Compact SC-70 3-pin surface mount package. Maximum power dissipation of 200 mW.

Operational temperature range: -55 °C to 150 °C. Low drain-source resistance of 10 Ω. Typical gate charge of 0.59 nC ensures fast switching. Automotive standards compliance: AEC-Q101, AEC-Q100, AEC-Q200. Package dimensions: 2.2 x 1.35 x 1 mm.

This MOSFET is ideal for use in industrial electronics, automotive systems, power management circuits, and electronic devices requiring compact and reliable switching elements. Environmentally robust and automotive grade, it meets the stringent demands of commercial and industrial electronic applications.

Explore more high-quality semiconductor components and MOSFETs at EnvMart to find parts that meet your project specifications efficiently.