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DiodesZetex P-Channel MOSFET 50 V, 130 mA, Enhancement Mode, 3-Pin SC-70 BSS84W

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model BSS84W
Width 1.35mm
Mount Type Surface
Series BSS84W
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200
Channel Type Type P
Maximum Continuous Drain Current Id 130mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 200mW
Typical Gate Charge Qg @ Vgs 0.59nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • Type P channel MOSFET in enhancement mode operation.
  • Compact 3-pin SC-70 package suitable for surface mounting.
  • Maximum power dissipation of 200 mW supports efficient operation.
  • Wide operating temperature range from -55 °C to 150 °C for various environments.
  • Low typical gate charge of 0.59 nC for fast switching performance.
  • Maximum gate-source voltage of ±20 V for enhanced durability.
  • Automotive standards compliance including AEC-Q101, AEC-Q100, and AEC-Q200.
  • Small form factor with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height.

Product Description

DiodesZetex BSS84W P-Channel MOSFET is a discrete semiconductor device optimized for low power surface mount applications. The device features a maximum continuous drain current of 130 mA and a maximum drain-source voltage of 50 V, providing robust performance in compact circuits.

This enhancement mode MOSFET has an efficient 3-pin SC-70 package, ensuring easy integration into printed circuit boards with surface mount technology. The device supports a maximum power dissipation of 200 mW, which allows reliable switching and amplification in diverse electrical and electronic systems.

The BSS84W supports an operating temperature range from -55 °C to 150 °C, making it suitable for industrial and automotive environments that require thermal stability. The MOSFET maintains a typical gate charge of only 0.59 nC at Vgs for fast and efficient switching. Additionally, it can tolerate a maximum gate-source voltage of ±20 V, enhancing its operational reliability under variable voltage stress.

Certified to automotive standards AEC-Q101, AEC-Q100, and AEC-Q200, the device meets rigorous quality and reliability criteria needed in automotive electronic control units and other safety-critical applications.

The small form factor with physical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height makes it ideal where board space is limited, such as in compact power management modules, sensor controllers, and embedded systems.

Type P channel enhancement mode MOSFET optimized for low current switching. Compact SC-70 surface mount package with 3 pins enhances integration. Peak power dissipation of 200 mW for reliable device operation. Wide temperature range supports industrial and automotive use cases.

Low gate charge enables efficient high-speed switching circuits. Robust maximum gate-source voltage ±20 V increases tolerance. Automotive quality approvals ensure high reliability. Small dimensions enable usage in space-constrained electronic designs.

This DiodesZetex BSS84W MOSFET is ideal for industrial, automotive, and electronic component assemblies requiring high reliability and efficient power control. It is widely used in power management, signal switching, and interface circuits.

Explore more MOSFETs and semiconductor components at EnvMart to support your design and manufacturing requirements.

DiodesZetex P-Channel MOSFET 50 V, 130 mA, Enhancement Mode, 3-Pin SC-70 BSS84W
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Frequently Asked Questions

The maximum continuous drain current for this model is 130 mA.

The maximum drain-source voltage for the BSS84W is 50 V.

The typical gate charge for this model is 0.59 nC.

The maximum power dissipation for this MOSFET is 200 mW.

This model has dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The operating temperature range for this model is from -55 °C to 150 °C.

The BSS84W is packaged in a compact SC-70 type, suitable for surface mounting.

This MOSFET complies with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.

The maximum gate-source voltage for this model is ±20 V.

The BSS84W has a total of 3 pins.

This model features a P-channel type channel in enhancement mode.

The maximum drain-source resistance for this MOSFET is 10 Ω.

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