Toshiba Isolated Dual N-Channel MOSFET Transistor 180mA 20V Enhancement 6-Pin US6 Package SSM6N35FU(TE85L,F)

Toshiba SSM6N35FU(TE85L,F) is a dual isolated N-Channel MOSFET transistor designed for discrete semiconductor applications. It supports a maximum continuous drain current of 180mA and can withstand a maximum drain-source voltage of 20V, making it suitable for compact power switching and amplification circuits.

The transistor is housed in a 6-pin US6 surface-mount package, providing a small form factor (1.25mm length x 1.25mm width x 0.9mm height) for easy integration on printed circuit boards. Its enhancement mode operation ensures efficient control of the current flow when a gate voltage is applied.

This component features a maximum power dissipation of 200mW and a drain-source resistance of 20Ω, offering reliable thermal handling capabilities. It operates safely within a temperature range of -55°C to 150°C, suitable for a variety of industrial and commercial electronic environments.

The device also provides a forward voltage of -0.9V and supports a maximum gate-source voltage between -10V and +10V, ideal for precise control in low voltage logic circuits. Each chip contains two elements to accommodate dual switching functions within a compact footprint.

Maximum continuous drain current of 180mA. Rated for 20V drain-source voltage. Surface mount 6-pin US6 package for space-efficient PCB layouts. Enhancement mode with isolated transistor configuration. Max power dissipation of 200mW ensures thermal stability.

Wide operating temperature range from -55°C to 150°C enables durability. Forward voltage drop of -0.9V for efficient conduction. Dual elements per chip increase functional performance.

Commonly used in electronics manufacturing, power management, signal processing, and embedded systems, this Toshiba MOSFET is well-suited for industrial, commercial, and laboratory applications requiring reliable N-channel switching devices. Its compact size and enhanced electrical characteristics help engineers optimize circuit designs for efficiency and durability.

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