Toshiba N-Channel Enhancement MOSFET, 15 A, 60 V, 8-Pin SOP Package TPCA8053-H(TE12L,Q

Toshiba TPCA8053-H(TE12L,Q is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and moderate power handling. It supports a maximum continuous drain current of 15 amperes and a drain-source voltage of 60 volts, supplied in a compact 8-pin SOP surface mount package.

This enhancement mode MOSFET features a low typical gate charge of 25 nC, enabling fast switching speeds and low gate drive power loss. The maximum drain-source on-resistance of 22.3 milliohms ensures low conduction losses, suitable for power management and electronic control applications.

The device operates reliably within a temperature range of -55°C up to 150°C, allowing usage in harsh industrial, commercial, and electronics manufacturing environments. Its robust maximum gate-source voltage rating of ±20 V enhances gate tolerance. The physical dimensions of approximately 5 mm in length and width and 950 micrometers in height facilitate compact PCB designs where space optimization is critical.

Typical uses for this MOSFET include power switching, motor control, DC-DC converters, and electronic load management in various electronic components and semiconductor circuits. It provides durable performance with a power dissipation capability of up to 2.8 watts.

The product is manufactured in Japan, ensuring quality and reliability in semiconductor performance. No specific automotive certifications apply to this device. The 8-pin SOP mounting supports modern surface-mount technology assembly processes.

The MOSFET is designed with enhancement mode channel type for efficient switching. Maximum continuous drain current of 15 A and maximum drain-source voltage of 60 V. Low gate charge of 25 nC and maximum Rds(on) resistance of 22.3 mΩ for high efficiency.

Wide operating temperature range from -55°C to +150°C. Compact 8-pin SOP surface mount package with dimensions 5 mm x 5 mm x 950 μm. Maximum power dissipation is 2.8 W for reliable thermal performance. Maximum gate-source voltage ±20 V offering robust gate protection.

Manufactured in Japan with high-quality semiconductor standards. Explore more semiconductor and MOSFET products at EnvMart for industrial, electronic, and laboratory applications.