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Toshiba N-Channel MOSFET, 15 A, 500 V, Enhancement Mode, TO-3PN Package TK20J50D(F)
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 19mm |
| Length | 40.5mm |
| Model | TK20J50D(F) |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PN |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 695-5391Brand: ToshibaManufacturers Part No.: TK20J50D(F) |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 280W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 15 A ensures reliable high current handling performance.
- Maximum drain-source voltage rated at 500 V supports high voltage applications.
- TO-3PN through-hole mount package for easy mounting and heat dissipation.
- Low on-resistance of 270 mΩ minimizes power loss and heating.
- Power dissipation of up to 280 W supports demanding power applications.
- Wide operating temperature range from -55°C to 150°C for industrial environments.
- Typical gate charge of 45 nC at Vgs helps with switching efficiency.
- Gate-source voltage tolerance of -30 V to +30 V improves robust control.
Product Description
Toshiba TK20J50D(F) is a high-performance N-Channel MOSFET transistor featuring a maximum continuous drain current of 15 A and a maximum drain-source voltage of 500 V. Encased in a TO-3PN package, this enhancement mode MOSFET is designed for through-hole mounting providing excellent thermal management suitable for demanding power electronic applications.
The device exhibits a low on-resistance of 270 mΩ that reduces conduction losses, and a power dissipation capability of 280 W allowing it to sustain high power loads. It operates reliably across a wide temperature range from -55°C up to 150°C, making it apt for harsh industrial, automotive, and power management environments.
The typical gate charge of 45 nC at Vgs voltage aids in efficient switching performance while the gate-source voltage range of -30 V to +30 V ensures robust operation under different control signals. The forward voltage drop is around -1.7 V, enhancing the device's efficiency in switching circuits.
Physically, the MOSFET measures 40.5 mm in length, 4.8 mm in width, and 19 mm in height. The three-pin TO-3PN package format supports standard through-hole mounting on PCBs. This transistor is part of Toshiba’s TK series, known for their reliable performance in power switching and control applications.
Applications include industrial power control, motor drives, DC/DC converters, and general power electronics where high voltage and current ratings are essential. It is especially suited for environments requiring rugged, high performance, and thermally efficient semiconductor components.
Maximum continuous drain current of 15 A. Rated voltage of 500 V between drain and source. Enhancement mode operation for power control. TO-3PN package supports through-hole mounting. Low on-resistance of 270 mΩ reduces losses.
Wide operating temperature range from -55°C to 150°C. Typical gate charge of 45 nC at Vgs voltage. Gate-source voltage tolerance from -30 V to +30 V. Forward voltage approximately -1.7 V. Compact dimensions: 40.5 mm × 4.8 mm × 19 mm.
These characteristics make the Toshiba TK20J50D(F) MOSFET a versatile and reliable choice for diverse power electronics industrial, laboratory, automotive, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous drain current of the Toshiba TK20J50D(F) is 15 A.
This model has a maximum drain-source voltage rating of 500 V, making it suitable for high voltage applications.
The Toshiba TK20J50D(F) is encased in a TO-3PN package, designed for through-hole mounting.
It features a low on-resistance of 270 mΩ, which helps minimize power loss and heating.
The power dissipation capability of the TK20J50D(F) is up to 280 W, supporting demanding power applications.
This unit operates reliably across a wide temperature range from -55°C to 150°C, suitable for industrial environments.
The typical gate charge of the Toshiba TK20J50D(F) at Vgs is 45 nC, which aids in switching efficiency.
The gate-source voltage tolerance for this MOSFET ranges from -30 V to +30 V, enhancing its control capabilities.
The dimensions of the Toshiba TK20J50D(F) are 40.5 mm in length, 4.8 mm in width, and 19 mm in height.
This model is suitable for applications in industrial power control, motor drives, and DC/DC converters.
The forward voltage drop for the Toshiba TK20J50D(F) is approximately -1.7 V, enhancing its efficiency in switching circuits.
The channel type of the Toshiba TK20J50D(F) is N-channel, operating in enhancement mode.
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