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onsemi Digital Transistor, 50 V NPN + PNP 100 mA Surface Mount SOT-363 (SC-88), 6-Pin MUN5311DW1T1G

Category Discrete Semiconductors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 2.2mm
Model MUN5311DW1T1G
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363 (SC-88)
Standards/Approvals RoHS, Pb-Free
Pin Count 6
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN + PNP
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 500mW
Transistor Configuration Isolated

Key Features

  • Maximum collector-emitter voltage of 50 V supports diverse circuit requirements.
  • Maximum continuous collector current is 100 mA for reliable performance.
  • Includes integrated bias resistors for direct digital input driving capability.
  • Low collector-emitter saturation voltage of 0.25 V enhances switching efficiency.
  • Compact dimensions of 2.2 mm length, 1.35 mm width, and 0.9 mm height.
  • Meets automotive standard AEC-Q101 ensuring high reliability under automotive conditions.
  • Maximum power dissipation rating of 500 mW for stable operation.
  • Rated for maximum operating temperature up to 150°C.

Product Description

onsemi MUN5311DW1T1G is a dual digital transistor housed in a compact surface mount SOT-363 (SC-88) package with six pins, combining both NPN and PNP transistor polarities. This component integrates resistors internally, allowing for direct drive from digital sources without the need for external bias resistors, simplifying circuit designs and reducing component count.

Operating with a maximum collector-emitter voltage of 50 volts and a continuous collector current up to 100 milliamperes, this transistor provides robust performance for a variety of switching and amplification applications in electronic circuits. The device offers a low collector-emitter saturation voltage of 0.25 volts, which contributes to reduced power losses during conduction, enhancing efficiency especially in battery-powered and low-voltage systems.

The package dimensions are optimized for high-density PCB layouts with a length of 2.2 mm, width of 1.35 mm, and height of 0.9 mm. This allows for space-saving implementations in compact devices.

Designed to withstand high operating temperatures up to 150°C and compliant with automotive standard AEC-Q101, this transistor is suitable for demanding environments including automotive and industrial applications. The product is RoHS compliant and Pb-Free, ensuring adherence to environmental and safety standards.

With an isolated transistor configuration and internal resistor integration, onsemi MUN5311DW1T1G is ideal for applications requiring direct digital interfacing and efficient switching in electronic designs such as signal processing, amplification, and automotive electronics.

Maximum collector-emitter voltage of 50 V supports diverse circuit requirements. Maximum continuous collector current is 100 mA for reliable performance. Includes integrated bias resistors for direct digital input driving capability.

Low collector-emitter saturation voltage of 0.25 V enhances switching efficiency. Compact package size suitable for high-density PCB layouts. Automotive grade AEC-Q101 certification for reliability. Power dissipation up to 500 mW enables stable operation.

Supports high-temperature operation up to 150°C. RoHS and Pb-Free compliance supports environmental regulations. Isolated transistor configuration allows versatile application use. Explore onsemi digital transistors on EnvMart for advanced semiconductor components tailored for industrial, automotive, and electronics manufacturing applications.

Explore more products in our Discrete Semiconductors category.

onsemi Digital Transistor, 50 V NPN + PNP 100 mA Surface Mount SOT-363 (SC-88), 6-Pin MUN5311DW1T1G
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