onsemi Type P-Channel MOSFET, 2.4 A, 20 V Enhancement Mode, 3-Pin SOT-23 Package NTR4101PT1G

onsemi brand NTR4101PT1G Type P-Channel MOSFET is an enhancement mode transistor designed for semiconductor applications requiring moderate current and voltage handling capabilities.

Its maximum continuous drain current of 2.4 A and maximum drain-source voltage of 20 V make it suitable for efficient power switching tasks in electronic circuit designs. The device is housed in a compact 3-pin SOT-23 surface mount package, providing a small footprint conducive for modern electronic assemblies.

With a maximum power dissipation of 730 mW and operating temperature range from -55°C to 150°C, this MOSFET ensures durability and reliability across various industrial and commercial environments.

Low maximum drain-source resistance of 85 milliohms enhances conduction efficiency, reducing power loss during operation. The typical gate charge of 7.5 nC at gate-source voltage enables fast and reliable switching performance.

Gate-source voltage rating of ±8 V protects the transistor during voltage spikes, maintaining device integrity. Forward voltage of 1.6 V complements low conduction loss requirements in power control circuits. The device’s precise package dimensions (length 2.9 mm, width 1.3 mm, and height 940 μm) allow for predictable and consistent PCB layout design.

These MOSFETs are commonly employed in power management systems, voltage regulation, and interface switching applications within industrial, consumer electronics, and automotive sectors that do not require automotive qualification.

Features a compact 3-pin SOT-23 surface mount package. Maximum power dissipation of 730 mW supports reliable performance. Low maximum drain-source resistance of 85 mΩ ensures efficient conduction. Operates over a wide temperature range from -55°C to 150°C.

Typical gate charge of 7.5 nC allows for quick switching. Gate-source voltage rating is ±8 V, protecting the device from voltage spikes. Forward voltage of 1.6 V suitable for low conduction losses. Package dimensions: Length 2.9 mm, Width 1.3 mm, Height 940 μm.

Designed for surface mount technology in semiconductor circuits. Ideal for power management and switching applications. Explore the Electronics & Electricals section for more semiconductor devices and components to meet your design requirements on EnvMart.