onsemi Type P-Channel MOSFET 1.5 A, 8 V Enhancement, 3-Pin SOT-323 NTS2101PT1G

onsemi NTS2101PT1G is a P-Channel Power MOSFET designed for compact surface mount applications. It features a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 8 V, housed in a space-saving 3-pin SOT-323 package measuring 2.2 mm in length, 1.35 mm in width, and 0.9 mm in height.

This enhancement mode MOSFET offers a low maximum drain-source resistance of 210 milliohms, ensuring efficient power switching with minimal conduction loss. It supports a maximum power dissipation of 330 mW and a maximum gate-source voltage of 8 V, making it suitable for reliable gate drive in power electronics.

The device operates across a broad temperature range from -55°C to 150°C, enabling its use in various demanding industrial and electronic environments. The typical gate charge is 6.4 nC at the gate-source voltage, facilitating fast switching speeds.

With a forward voltage of -1.2 V, the NTS2101PT1G is well suited for power amplification and switching applications in semiconductor circuits. It is optimized for surface mounting on printed circuit boards, contributing to streamlined manufacturing and efficient space utilization.

This MOSFET is ideal for applications in industrial power control, electronic devices, and embedded semiconductor modules that require reliable, low-voltage P-channel MOSFET performance.

Designed for surface mount applications ensuring compact PCB layout. Maximum power dissipation of 330 mW suitable for low power electronic circuits. Enhancement mode device with a typical gate charge of 6.4 nC at Vgs. Wide operating temperature range from -55°C to 150°C for industrial environments.

Low maximum drain-source resistance of 210 milliohms minimizing conduction losses. Robust 3-pin SOT-323 surface mount package with dimensions 2.2 mm length and 1.35 mm width. Maximum gate-source voltage rating of ±8 V for reliable gate control.

Forward voltage of -1.2 V and no automotive standard compliance. Ideal for power switching and amplification in electronic devices and circuits. Suitable for industrial, electronic, and semiconductor applications requiring reliable MOSFET performance.

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