$3.95
$3.83
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET, 130 A Max Drain Current, 200 V Max Drain-Source Voltage, Enhancement Mode IRFP4668PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4668PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 130A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 520W |
| Typical Gate Charge Qg @ Vgs | 161nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 130 A supports high power applications.
- Rated for 200 V maximum drain-source voltage for robust operation.
- Low drain-source resistance of 10 milliohms reduces power losses.
- High power dissipation capability of 520 W ensures reliable thermal performance.
- Enhanced body diode improves switching performance and efficiency.
- Typical gate charge of 161 nC enables fast switching.
- Wide operating temperature range from -55°C to 175°C.
- Suitable for through-hole mounting with 3-pin TO-247 package.
Product Description
Infineon IRFP4668PBF HEXFET N-Channel MOSFET is designed for high-performance power management applications. It features a maximum continuous drain current of 130 A and a maximum drain-source voltage of 200 V in an enhancement mode, packaged in a 3-pin TO-247 form factor, suitable for through-hole mounting. The device exhibits a low on-state resistance (Rds(on)) of 10 milliohms, minimizing conduction losses and improving efficiency in synchronous rectification circuits.
Its enhanced body diode optimizes switching performance, making it highly efficient for fast switching applications. The MOSFET supports a maximum power dissipation of 520 W at 25°C and operates reliably over a temperature range from -55°C to 175°C, supporting demanding industrial environments.
The typical gate charge of 161 nC at Vgs enables rapid switching, beneficial for high-frequency and hard-switched circuits. The device’s robust design ensures increased ruggedness against dynamic voltage conditions (dV/dt), with fully characterized avalanche and thermal performance to maintain reliability under heavy loads.
Applications include high-speed power switching, uninterruptible power supplies (UPS), industrial automation systems, and other demanding electrical and power management systems. The TO-247 package provides mechanical robustness and ease of mounting for various industrial setups.
Maximum continuous drain current of 130 A supports high power applications. Rated for 200 V maximum drain-source voltage for robust operation. Low drain-source resistance of 10 milliohms reduces power losses. High power dissipation capability of 520 W ensures reliable thermal performance.
Enhanced body diode improves switching performance and efficiency. Typical gate charge of 161 nC enables fast switching. Wide operating temperature range from -55°C to 175°C. Suitable for through-hole mounting with 3-pin TO-247 package.
Designed for use in high-speed, hard-switched, and high-frequency circuits. Ideal for power management in industrial, automation, and UPS systems. Explore the Infineon semiconductor range or browse more MOSFET products on EnvMart for your industrial and electronic component needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 130 A, supporting high power applications.
It is rated for a maximum drain-source voltage of 200 V, ensuring robust operation in various applications.
The low drain-source resistance is 10 milliohms, which helps to reduce power losses during operation.
It has a high power dissipation capability of 520 W at 25°C, ensuring reliable thermal performance.
The typical gate charge is 161 nC, which enables fast switching in high-frequency applications.
It operates reliably over a wide temperature range from -55°C to 175°C, suitable for demanding environments.
This model is suitable for through-hole mounting with a 3-pin TO-247 package.
It features an N-channel design, which is common for enhancement mode MOSFETs.
The forward voltage of the enhanced body diode is 1.3 V, which contributes to its improved switching performance.
The maximum gate-source voltage is -30 V to +30 V, allowing for flexibility in various applications.
It is designed for high-speed power switching, uninterruptible power supplies (UPS), and industrial automation systems.
The dimensions of the TO-247 package are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$18.31
$17.76
-3%
New
$3.95
$3.83
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent