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Infineon HEXFET N-Channel MOSFET 60 V 160 A 230 W TO-220 Through Hole 3-Pin IRFB3306PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB3306PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 160 A for robust power handling.
- Maximum drain-source voltage of 60 V suitable for various power circuits.
- Low drain-source resistance of 4 milliohms for efficient conduction.
- High maximum power dissipation up to 230 W supports demanding loads.
- Operates within a temperature range from -55°C to 175°C ensuring reliability.
- Typical gate charge of 85 nC allows efficient switching performance.
- Compact TO-220 package with three pins supports through-hole mounting.
- Forward voltage of 1.3 V reduces power loss in conduction state.
Product Description
Infineon IRFB3306PBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for industrial and electronic applications requiring efficient switching and high current handling. This device operates at a maximum continuous drain current of 160 A and a voltage rating of 60 V, optimized for controlling power in motor control circuits and AC-DC synchronous rectifiers.
Housed in a robust 3-pin TO-220 through-hole package, the IRFB3306PBF is engineered for easy integration in power electronic boards. Its low drain-source resistance of 4 mΩ minimizes conduction losses, while the maximum power dissipation rating of 230 W supports demanding power loads and high efficiency.
The device features an enhancement channel mode with a gate voltage range of -20 V to +20 V, suitable for fast and reliable switching operations. With a typical gate charge of 85 nC and a forward voltage drop of 1.3 V, it balances switching speed with energy efficiency.
Operating temperature ranges from -55°C to +175°C ensure device reliability in harsh industrial environments. This MOSFET is suitable for applications in industrial motor control, power supplies, and general discrete semiconductor uses.
Infineon's HEXFET series is well-known for rugged construction and performance, delivering high efficiency, durability, and stable operation for various power electronics. Maximum continuous drain current of 160 A provides robust power capacity.
Voltage rating of 60 V ensures application versatility. Low Rds(on) of 4 mΩ facilitates energy-efficient conduction. Power dissipation up to 230 W caters to high power applications. Wide temperature range enhances reliability under adverse conditions.
Compact TO-220 package supports simple through-hole mounting. Fast switching thanks to low gate charge of 85 nC. Designed for motor control and AC-DC synchronous rectifiers. This product is categorized under MOSFETs within semiconductors, suitable for electronics industrial use including manufacturing, automotive, and power supply applications.
Explore the Infineon MOSFET category on EnvMart for related semiconductors and discrete electronic components to complement your power electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 160 A, allowing for robust power handling in various applications.
The IRFB3306PBF has a maximum drain-source voltage rating of 60 V, making it suitable for a variety of power circuits.
This model features a low drain-source resistance of 4 milliohms, which facilitates efficient conduction and minimizes losses.
The maximum power dissipation for the IRFB3306PBF is up to 230 W, supporting demanding loads in power applications.
This model operates within a temperature range from -55°C to 175°C, ensuring reliability in harsh environments.
The typical gate charge for this MOSFET is 85 nC, which allows for efficient switching performance.
It is housed in a compact TO-220 package, which supports through-hole mounting for easy integration.
This MOSFET has a pin count of 3, allowing for straightforward connections in electronic circuits.
The forward voltage drop for the IRFB3306PBF is 1.3 V, which helps reduce power loss during conduction.
This model is an N-channel MOSFET, suitable for various power control applications.
The maximum gate-source voltage for this model is -20 V to +20 V, which is suitable for fast and reliable switching operations.
This MOSFET is suitable for industrial motor control, power supplies, and general discrete semiconductor uses.
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