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Infineon N-Channel MOSFET 330 A, 40 V, 8-Pin SuperSO8 5 x 6 ISC037N03L5ISATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISC037N03L5ISATMA1 |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 330A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- OptiMOS power MOSFET technology enhances performance and efficiency.
- Integrated monolithic Schottky-like diode ensures fast switching.
- Optimized for high-performance buck converters in power applications.
- Surface mount type with 8 pins for easy PCB integration.
- Supports a maximum power dissipation of 81 W, suitable for demanding loads.
- Operating temperature ranges from -55°C to 175°C for reliable use in harsh environments.
- Typical gate charge of 80 nC at Vgs enhances switching speed.
- Maximum gate-source voltage of ±20 V provides robust control.
Product Description
Infineon ISC037N03L5ISATMA1 is a high-performance N-Channel MOSFET designed with OptiMOS technology, offering a maximum continuous drain current of 330 A and maximum drain-source voltage of 40 V. Its 8-pin SuperSO8 5 x 6 surface-mount package supports compact and efficient PCB layouts.
This MOSFET integrates a monolithic Schottky-like diode, enhancing switching characteristics for power electronics applications, particularly in high-performance buck converters.
Key electrical properties include a maximum power dissipation of 81 W, typical gate charge of 80 nC at a gate-source voltage of 8 V, and a maximum drain-source resistance of only 1.4 mΩ, which contributes to low power losses and higher efficiency.
The device is engineered for operation in extreme environments, with an operating temperature range from -55°C up to 175°C, and a gate-source voltage tolerance up to ±20 V. These robust features make it ideal for industrial, automotive, and power management applications.
Built to meet RoHS compliance and the automotive standard AEC-Q101, the ISC037N03L5ISATMA1 ensures environmental safety and reliable automotive-grade performance. Utilizes OptiMOS technology for improved efficiency and switching performance.
Incorporates an integrated Schottky-like diode for fast switching applications. Designed for high power dissipation applications up to 81 W. Surface mount package with 8 pins for versatile PCB mounting. Extensive operating temperature range supports harsh environmental conditions.
Low on-resistance minimizes conduction losses during operation. Compliant with RoHS directives and meets rigorous automotive standards.
This Infineon MOSFET is suitable for power electronics in industrial controls, automotive systems, and electronic power conversion equipment. It is engineered for high efficiency, reliability, and robust operation.
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Frequently Asked Questions
The maximum continuous drain current for this model is 330 A.
This MOSFET has a maximum drain-source voltage of 40 V.
The typical gate charge at a gate-source voltage of 8 V is 80 nC.
It operates within a temperature range from -55°C to 175°C.
The maximum power dissipation is 81 W, suitable for demanding applications.
This model comes in a SuperSO8 5 x 6 surface mount package.
The maximum gate-source voltage is ±20 V.
The maximum drain-source resistance is 1.4 mΩ, contributing to low power losses.
Yes, it is RoHS compliant and meets the automotive standard AEC-Q101.
It integrates a monolithic Schottky-like diode, enhancing switching characteristics.
This model is suitable for power electronics in industrial controls, automotive systems, and electronic power conversion equipment.
Key features include high efficiency with OptiMOS technology, fast switching with an integrated diode, and a wide operating temperature range.
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