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Infineon 650 V 30 A Switching Diode Single 2-Pin Through Hole TO-220 IDP30E65D2XKSA1

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Infineon 650 V 30 A Switching Diode Single 2-Pin Through Hole TO-220 IDP30E65D2XKSA1

Name: Infineon 650 V 30 A Switching Diode Single 2-Pin Through Hole TO-220 IDP30E65D2XKSA1
Brand: Infineon
SKU: 209969
Price: 1 USD
Availability: InStock

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Category Schottky Diodes & Rectifiers Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	15.95mm
Length	10.2mm
Model	IDP30E65D2XKSA1
Width	4.5mm
Mount Type	Through Hole
Series	IDP30E65D2
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-40°C
Pin Count	2
Maximum Continuous Forward Current If	30A
Peak Reverse Repetitive Voltage Vrrm	650V
Diode Configuration	Single
Rectifier Type	Switching
Peak Reverse Current Ir	800μA
Peak Non-Repetitive Forward Surge Current Ifsm	180A
Maximum Forward Voltage Vf	2.2V
Peak Reverse Recovery Time trr	73ns
Low reverse recovery charge	forward voltage ratio for BiC performance

Key Features

Maximum continuous forward current of 30 Amperes suitable for high current applications.
Peak reverse repetitive voltage rating of 650 Volts guarantees reliable blocking voltage.
Fast switching diode with low reverse recovery time of 73 nanoseconds enhances efficiency.
Operating temperature range from -40°C to 175°C ensures durability under harsh conditions.
Peak non-repetitive forward surge current of 180 Amperes supports high transient loads.
Low maximum forward voltage of 2.2 Volts contributes to reduced power losses.
Designed with good EMI behavior and low conduction losses for advanced electronic applications.

Product Description

Infineon IDP30E65D2XKSA1 is a high performance switching diode rated for 650 Volts peak reverse voltage and 30 Amperes continuous forward current. Packaged in a TO-220 through-hole format with two pins, this diode is suited for industrial, telecommunications, UPS systems, welding equipment, and motor drive applications up to 30 kHz.

This Rapid 1 family emitter controlled diode offers fast switching between 18 kHz and 40 kHz with a temperature-stable forward voltage of approximately 1.35 V. The low reverse recovery time of 73 ns reduces switching losses and enhances power factor correction in circuits.

Key performance features include a peak non-repetitive forward surge current of 180 A, peak reverse recovery charge optimized for BiC performance, and robust operation within a temperature range from -40°C to 175°C. The diode's construction ensures ultra-fast emitter control with good EMI behavior and easy paralleling for scalable designs.

Physical dimensions are compact, making it suitable for PCB designs where space is constrained: height 15.95 mm, length 10.2 mm, and width 4.5 mm. This diode does not carry automotive certification and complies with JEDEC standards for switching diodes.

Mount type: Through Hole with TO-220 package. Maximum continuous forward current: 30 A. Peak reverse repetitive voltage: 650 V. Low forward voltage of 2.2 V for efficient conduction. Peak reverse current: 800 μA supporting stable operation.

Peak reverse recovery time: 73 ns ensuring fast switching. Operating temperature range: -40°C to 175°C for extreme environment use. Compact size with height 15.95 mm, length 10.2 mm, width 4.5 mm. No automotive standard approval; suitable for industrial and telecom applications.

This diode is ideal for industrial, laboratory, construction, power supply design, telecom, and manufacturing applications requiring reliable and efficient switching performance. Infineon’s advanced emitter control technology brings ultra-fast switching with low losses and enhanced electromagnetic compatibility characteristics.

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