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onsemi QFET Type P-Channel MOSFET 30 A, 60 V Enhancement, TO-220 Package, 3-Pin FQPF47P06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.19mm |
| Length | 10.16mm |
| Model | FQPF47P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- The device is designed with QFET planar technology for improved performance.
- Utilizes an enhancement mode channel for efficient switching.
- Maximum power dissipation rated at 62 W allows reliable operation under load.
- Features low on-resistance of 26 mΩ reducing conduction losses.
- Operates within a temperature range from -55°C to 175°C for versatility.
- Maximum gate-source voltage is ±25 V ensuring robust gate control.
- Compact dimensions with length 10.16 mm, width 4.7 mm, and height 9.19 mm.
- Ideal for power supplies, DC-DC converters, lighting ballasts and motion control applications.
Product Description
onsemi FQPF47P06 is a QFET Type P-Channel MOSFET engineered for power applications requiring a maximum continuous drain current of 30 A and a drain-source voltage of 60 V. Encapsulated in a 3-pin TO-220 through-hole package, this device uses advanced QFET planar technology that enhances switching performance by minimizing gate charge and on-state losses.
This enhancement mode MOSFET features a low maximum drain-source resistance of 26 mΩ, enabling efficient energy conversion, particularly in DC-DC converters and power factor correction circuits. The device can dissipate power up to 62 W, providing robust thermal handling for demanding environments.
Operational temperature ranges from a low of -55°C to a high of 175°C, suitable for harsh industrial and automotive applications. The gate-source voltage tolerance of ±25 V ensures stable operation and improved noise immunity.
Physical dimensions of the component are compact with a length of 10.16 mm, width of 4.7 mm, and height of 9.19 mm, facilitating integration in tight PCB layouts. Typical gate charge is 84 nC at Vgs, contributing to reduced switching losses and higher efficiency.
onsemi's FQPF47P06 serves a wide range of uses including power supplies, power factor correction, DC-DC converters, plasma display panels, and lighting ballasts, making it suitable for industrial, manufacturing, and HVAC systems.
The device is optimized for low on-resistance and reduced switching losses. Advanced QFET planar technology enhances device reliability and performance. Through-hole mount type designed for robust mechanical stability. Compatible with standard TO-220 mounting equipment.
Operates safely within automotive and industrial temperature standards. Explore the robust range of onsemi semiconductor products at EnvMart for high-performance electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the FQPF47P06 is 30 A.
This model has a maximum drain-source voltage rating of 60 V.
The maximum drain-source resistance is 26 mΩ, which helps reduce conduction losses.
It can dissipate power up to 62 W, allowing reliable operation under load.
The operational temperature range is from -55°C to 175°C, making it suitable for harsh environments.
The dimensions are 10.16 mm in length, 4.7 mm in width, and 9.19 mm in height.
The typical gate charge is 84 nC at Vgs, contributing to reduced switching losses.
This device uses a through-hole mount type, ensuring robust mechanical stability.
The maximum gate-source voltage is ±25 V, which provides robust gate control.
It is suitable for power supplies, DC-DC converters, lighting ballasts, and motion control applications.
This model belongs to the QFET series, which is designed for enhanced performance.
The country of origin for this device is India.
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