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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMW65R107M1HXKSA1 |
| Mount Type | Through Hole |
| Series | CoolSiC |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 142mΩ |
| Channel Mode | Enhancement |
Infineon IMW65R107M1HXKSA1 CoolSiC Type N-Channel MOSFET is a state-of-the-art power semiconductor device offering a maximum continuous drain current of 20 amperes and a drain-source voltage rating of 650 volts.
This MOSFET uses silicon carbide technology in an enhancement mode configuration to provide superior performance, robustness, and efficiency in power switching applications. It is packaged in a 3-pin TO-247 through-hole form factor, facilitating straightforward installation on printed circuit boards and heat sinks.
The device features low drain-source resistance of 142 milliohms, which minimizes conduction losses and improves overall system efficiency. With its low capacitances, it supports optimized switching behavior at elevated current levels while maintaining excellent gate oxide reliability and thermal management.
Its increased avalanche capability ensures robustness under transient voltage conditions, making it highly reliable for demanding industrial environments. This MOSFET is designed to work seamlessly with standard gate driver circuits, simplifying integration into existing power systems.
Application areas include industrial power supplies, motor drives, renewable energy inverters, automotive electronic modules, and other equipment requiring efficient and durable switching devices.
Utilizes silicon carbide technology for enhanced durability and performance. Supports high continuous drain current of 20 amperes for demanding applications. Capable of withstanding voltages up to 650 volts between drain and source.
Features low drain-source resistance of 142 milliohms for efficient conduction. Designed as an enhancement mode device for reliable switching. Encapsulated in a through-hole TO-247 3-pin package for easy mounting. Optimized for low capacitance to improve switching behavior at high currents.
Exhibits excellent thermal performance and avalanche robustness. Compatible with standard gate drive circuitry. Suitable for industrial, power electronics, and automotive electrical systems. Discover high-quality MOSFETs and other semiconductor components in the Electronics & Electricals category at EnvMart, supporting reliable industrial and commercial applications.
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