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Infineon CoolSiC Type N-Channel MOSFET 20 A 650 V Enhancement 3-Pin TO-247 IMW65R107M1HXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IMW65R107M1HXKSA1
Mount Type Through Hole
Series CoolSiC
Package Type TO-247
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 20A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 142mΩ
Channel Mode Enhancement

Key Features

  • Utilizes silicon carbide technology for enhanced durability and performance.
  • Supports high continuous drain current of 20 amperes for demanding applications.
  • Capable of withstanding voltages up to 650 volts between drain and source.
  • Features low drain-source resistance of 142 milliohms for efficient conduction.
  • Designed as an enhancement mode device for reliable switching.
  • Encapsulated in a through-hole TO-247 3-pin package for easy mounting.
  • Optimized for low capacitance to improve switching behavior at high currents.
  • Exhibits excellent thermal performance and avalanche robustness.

Product Description

Infineon IMW65R107M1HXKSA1 CoolSiC Type N-Channel MOSFET is a state-of-the-art power semiconductor device offering a maximum continuous drain current of 20 amperes and a drain-source voltage rating of 650 volts.

This MOSFET uses silicon carbide technology in an enhancement mode configuration to provide superior performance, robustness, and efficiency in power switching applications. It is packaged in a 3-pin TO-247 through-hole form factor, facilitating straightforward installation on printed circuit boards and heat sinks.

The device features low drain-source resistance of 142 milliohms, which minimizes conduction losses and improves overall system efficiency. With its low capacitances, it supports optimized switching behavior at elevated current levels while maintaining excellent gate oxide reliability and thermal management.

Its increased avalanche capability ensures robustness under transient voltage conditions, making it highly reliable for demanding industrial environments. This MOSFET is designed to work seamlessly with standard gate driver circuits, simplifying integration into existing power systems.

Application areas include industrial power supplies, motor drives, renewable energy inverters, automotive electronic modules, and other equipment requiring efficient and durable switching devices.

Utilizes silicon carbide technology for enhanced durability and performance. Supports high continuous drain current of 20 amperes for demanding applications. Capable of withstanding voltages up to 650 volts between drain and source.

Features low drain-source resistance of 142 milliohms for efficient conduction. Designed as an enhancement mode device for reliable switching. Encapsulated in a through-hole TO-247 3-pin package for easy mounting. Optimized for low capacitance to improve switching behavior at high currents.

Exhibits excellent thermal performance and avalanche robustness. Compatible with standard gate drive circuitry. Suitable for industrial, power electronics, and automotive electrical systems. Discover high-quality MOSFETs and other semiconductor components in the Electronics & Electricals category at EnvMart, supporting reliable industrial and commercial applications.

Infineon CoolSiC Type N-Channel MOSFET 20 A 650 V Enhancement 3-Pin TO-247 IMW65R107M1HXKSA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 20 amperes.

It is capable of withstanding a maximum drain-source voltage of 650 volts.

This unit is packaged in a TO-247 through-hole package, which features 3 pins for easy mounting.

The drain-source resistance is rated at 142 milliohms, which helps minimize conduction losses.

This model utilizes silicon carbide technology, enhancing its durability and performance.

Yes, it is designed as an enhancement mode device for reliable switching applications.

It is suitable for applications such as industrial power supplies, motor drives, renewable energy inverters, and automotive electronic modules.

Key features include low capacitance for improved switching behavior, excellent thermal performance, and increased avalanche robustness.

The channel type of this device is Type N.

This model is designed for through-hole mounting, making it easy to install on printed circuit boards.

Yes, it is compatible with standard gate driver circuits, simplifying integration into existing power systems.

The country of origin for this MOSFET is India.

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