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onsemi QFET Type P-Channel MOSFET 30 A, 60 V Enhancement 3-Pin TO-220 FQPF47P06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.19mm |
| Length | 10.16mm |
| Model | FQPF47P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Offers low on-resistance for efficient power management.
- Supports maximum continuous drain current of 30 amperes.
- Maximum drain-source voltage rated at 60 volts.
- Enhancement mode channel suitable for switching applications.
- Maximum power dissipation of 62 watts ensures robust operation.
- Wide operating temperature range from -55°C to 175°C.
- Features standard TO-220 through-hole mounting with 3 pins.
- Typical gate charge of 84 nC reduces switching losses.
Product Description
onsemi FQPF47P06 is a high-performance QFET Type P-Channel MOSFET designed for efficient power management in electronic circuits. This Enhancement mode device features a maximum continuous drain current of 30 A and can handle drain-source voltages up to 60 V. Housed in a 3-pin TO-220 package, it supports through-hole mounting, making it suitable for industrial and commercial electronics assembly.
The MOSFET offers a maximum power dissipation of 62 W and a wide operating temperature range from -55°C to 175°C, ensuring reliable operation under demanding conditions. Its low on-resistance minimizes conduction losses, while the typical gate charge of 84 nC enables faster switching with reduced energy loss.
Applications for the FQPF47P06 MOSFET include power supply circuits, power factor correction (PFC) modules, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems. The device is manufactured using advanced QFET process technology which provides excellent performance and a superior figure of merit compared to competing planar MOSFETs.
The compact dimensions of approximately 10.16 mm in length, 9.19 mm in height, and 4.7 mm in width facilitate integration into a variety of circuit designs without compromising space. The device does not hold specific automotive standards or certifications but is optimized for general industrial electronics use.
Offers low on-resistance for efficient power management. Supports maximum continuous drain current of 30 amperes. Maximum drain-source voltage rated at 60 volts. Enhancement mode channel suitable for switching applications.
Maximum power dissipation of 62 watts ensures robust operation. Wide operating temperature range from -55°C to 175°C. Features standard TO-220 through-hole mounting with 3 pins. Typical gate charge of 84 nC reduces switching losses.
Designed for applications including power supplies, DC-DC converters, and motion control.
This onsemi MOSFET is ideal for industrial, laboratory, and commercial electronics requiring high efficiency and durability. Explore more semiconductor components and power management devices in the EnvMart catalog to find compatible products and accessories.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 amperes.
It is rated for a maximum drain-source voltage of 60 volts.
This model can dissipate a maximum power of 62 watts.
The typical gate charge is 84 nC, which helps reduce switching losses.
It operates within a wide temperature range from -55°C to 175°C.
It features standard TO-220 through-hole mounting with 3 pins.
The dimensions are approximately 10.16 mm in length, 9.19 mm in height, and 4.7 mm in width.
It is suitable for applications including power supply circuits, DC-DC converters, and motion control systems.
The channel type is P-Channel, designed for enhancement mode operation.
The maximum gate-source voltage is rated at -25V to +25V.
The maximum drain-source resistance is 26 mΩ.
The country of origin for this MOSFET is India.
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