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onsemi QFET Type P-Channel MOSFET 60 V 27 A Enhancement Mode, 3-Pin TO-220 Package FQP27P06

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onsemi QFET Type P-Channel MOSFET 60 V 27 A Enhancement Mode, 3-Pin TO-220 Package FQP27P06

Name: onsemi QFET Type P-Channel MOSFET 60 V 27 A Enhancement Mode, 3-Pin TO-220 Package FQP27P06
Brand: onsemi
SKU: 207745
Price: 2.01 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	9.4mm
Length	10.1mm
Model	FQP27P06
Width	4.7mm
Mount Type	Through Hole
Series	QFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	27A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	70mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	120W
Typical Gate Charge Qg @ Vgs	33nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	-4V

Key Features

Maximum continuous drain current of 27 amperes for high current capability.
Maximum drain-source voltage rating of 60 volts suitable for medium voltage circuits.
Low on-resistance of 70 milliohms for reduced conduction losses.
Typical gate charge of 33 nanocoulombs enabling fast switching performance.
Maximum power dissipation of 120 watts allows robust thermal handling.
Wide operating temperature range from -55°C to 175°C ensures reliability under harsh conditions.
TO-220 through-hole package with 3 pins for easy mounting and handling.
Enhanced device with QFET® planar technology offering lower switching and conduction losses.

Product Description

onsemi FQP27P06 is a high-performance P-Channel MOSFET transistor featuring QFET® planar technology. It supports a maximum continuous drain current of 27 A and voltage rating of 60 V, provided in a 3-pin TO-220 through-hole package, ideal for power switching and amplification.

Engineered with low on-resistance (Rds(on) = 70mΩ) and a typical gate charge (Qg) of 33nC, this device minimizes conduction and switching losses, improving efficiency in power management circuits.

With a power dissipation capability of 120 W and a thermal operating range from -55°C to 175°C, the FQP27P06 ensures reliable operation in demanding industrial environments.

The MOSFET is suited for a variety of applications including power supplies, power factor correction (PFC), DC-DC converters, plasma display panels, lighting ballasts, and motion control systems.

The robust TO-220 package facilitates through-hole mounting and effective heat dissipation. Its pin count of 3 allows straightforward circuit integration. Maximum continuous drain current of 27 amperes for heavy load conditions.

Maximum drain-source voltage up to 60 volts ensures versatility in medium voltage designs. Low drain-source resistance to minimize conduction losses. Gate charge and switching characteristics optimized for efficient performance.

Wide temperature range and high power dissipation capability for reliability and durability. Standard TO-220 package supports easy mounting and heat sinking. Utilizes advanced QFET® technology for superior figure-of-merit versus competing planar MOSFETs.

Ideal for industrial, laboratory, commercial power switching, HVAC, and manufacturing controls. Discover the extensive range of semiconductor solutions from onsemi for your industrial and electronic component needs at EnvMart.