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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FDP3672 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.9A |
| Maximum Drain Source Voltage Vds | 105V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 135W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
onsemi FDP3672 PowerTrench N-Channel MOSFET is a high-quality semiconductor device designed for robust power switching applications requiring up to 5.9 A continuous drain current and 105 V drain-source voltage. This enhancement mode MOSFET comes in a durable 3-pin TO-220 package that supports through-hole mounting, making it ideal for both industrial and commercial electronic circuit designs.
The device offers a low maximum drain-source resistance of 33 milliohms, enabling efficient conduction with reduced power losses. It supports a maximum power dissipation of 135 watts, allowing for reliable performance under demanding electrical loads. Its wide operating temperature range from -55°C to 175°C ensures stability and durability in various environmental conditions.
The FDP3672 MOSFET features a maximum gate-source voltage rating of ±20 volts and a forward voltage drop of 1.25 volts, which contribute to energy-efficient switching. Its typical gate charge at the specified gate voltage is 28 nanocoulombs, promoting rapid gate transitions and fast device switching.
With compact physical dimensions of 10.67 mm length, 9.4 mm height, and 4.83 mm width, this MOSFET suits space-constrained applications. It is engineered to serve in industrial, automotive electronics, power management systems, and general-purpose semiconductor applications requiring reliable and efficient switching components.
Features a 3-pin TO-220 package suitable for through-hole mounting. Maximum drain-source resistance of 33 milliohms assures efficient conduction. Can dissipate up to 135 watts of power for high-performance applications. Operating temperature range from -55°C to 175°C supports varied environments.
Enhancement mode channel with maximum gate-source voltage of ±20 volts. Forward voltage drop is 1.25 volts ensuring low power loss. Typical gate charge at Vgs is 28 nanocoulombs facilitating fast switching. Measures 10.67 mm in length, 9.4 mm in height, and 4.83 mm in width for compact design.
This product is ideal for applications in industrial automation, power supplies, motor controls, and consumer electronics. It supports OEMs and engineers seeking dependable semiconductor components that adhere to power efficiency and thermal management requirements.
Explore more high-performance MOSFETs and semiconductor solutions at EnvMart for your engineering and manufacturing needs.
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