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Infineon IPT N-Channel MOSFET 800 V 400 A TO-263 8-Pin Surface Mount IPT012N08N5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPT012N08N5ATMA1
Mount Type Surface
Series IPT
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 400A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1.2mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Supports continuous current up to 400 amps for heavy-load switching applications.
  • High voltage rating of 800 volts for demanding power conversion tasks.
  • Low on-resistance of 1.2 milliohms reduces conduction power loss.
  • Maximum power dissipation of 81 watts enables sustained operation under high load.
  • Operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
  • Typical gate charge of 80 nanocoulombs allows predictable switching.
  • Maximum gate-source voltage of 20 volts for secure gate drive control.
  • Complies with automotive standard AEC-Q101 suitable for vehicle applications.

Product Description

Infineon IPT012N08N5ATMA1 is a high-voltage, high-current N-Channel MOSFET semiconductor designed for advanced power switching applications. It supports a maximum continuous drain current of 400 amps and can withstand a maximum drain-source voltage of 800 volts. Packaged in a surface-mount TO-263 8-pin configuration, this device provides a robust solution for power conversion and automotive electronic circuits requiring efficient conduction and thermal management.

The transistor exhibits a low on-resistance (Rds(on)) of 1.2 milliohms, reducing power losses during conduction phases. With a maximum power dissipation rating of 81 watts, it is capable of handling significant thermal loads, while the wide operating temperature range from -55°C to 175°C ensures stable performance across industrial and automotive environments.

The typical gate charge of 80 nanocoulombs allows precise and predictable switching behavior, and a maximum gate-source voltage of 20 volts guides proper driving voltages for gate control. This device complies with the stringent AEC-Q101 automotive standard, confirming its suitability for vehicle electronic power modules.

RoHS compliance guarantees adherence to environmental standards limiting hazardous substances.

Applications include use in high-voltage traction inverter stages, automotive battery management systems, industrial motor drives, and high-current DC-DC converters. The TO-263 package supports effective PCB thermal dissipation and heatsink integration for enhanced reliability.

Supports continuous current up to 400 amps for heavy-load switching applications. High voltage rating of 800 volts for demanding power conversion tasks. Low on-resistance of 1.2 milliohms reduces conduction power loss. Maximum power dissipation of 81 watts enables sustained operation under high load.

Operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Typical gate charge of 80 nanocoulombs allows predictable switching. Maximum gate-source voltage of 20 volts for secure gate drive control.

Complies with automotive standard AEC-Q101 suitable for vehicle applications. RoHS compliant, meeting environmental and hazardous substance restrictions. Discover more semiconductor power solutions by browsing our Electronics & Electricals categories at EnvMart.

Infineon IPT N-Channel MOSFET 800 V 400 A TO-263 8-Pin Surface Mount IPT012N08N5ATMA1
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Frequently Asked Questions

The Infineon IPT012N08N5ATMA1 supports a maximum continuous drain current of 400 amps, making it suitable for heavy-load switching applications.

This model can withstand a maximum drain-source voltage of 800 volts, which is essential for demanding power conversion tasks.

It has a low on-resistance of 1.2 milliohms, which helps to reduce conduction power loss during operation.

The maximum power dissipation for this model is rated at 81 watts, enabling sustained operation under high load conditions.

It operates effectively within a temperature range of -55°C to 175°C, ensuring reliability in harsh environments.

The typical gate charge is 80 nanocoulombs, allowing for predictable switching behavior.

The maximum gate-source voltage is 20 volts, which provides secure gate drive control.

This model is packaged in a TO-263 8-pin surface mount configuration, which supports effective PCB thermal dissipation.

Yes, it complies with the AEC-Q101 automotive standard, making it suitable for vehicle applications.

The device is RoHS compliant, ensuring it meets environmental standards that limit hazardous substances.

It is suitable for applications such as high-voltage traction inverter stages, automotive battery management systems, and industrial motor drives.

The IPT012N08N5ATMA1 has a pin count of 8, which is typical for its TO-263 package design.

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