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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPT012N08N5ATMA1 |
| Mount Type | Surface |
| Series | IPT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPT012N08N5ATMA1 is a high-voltage, high-current N-Channel MOSFET semiconductor designed for advanced power switching applications. It supports a maximum continuous drain current of 400 amps and can withstand a maximum drain-source voltage of 800 volts. Packaged in a surface-mount TO-263 8-pin configuration, this device provides a robust solution for power conversion and automotive electronic circuits requiring efficient conduction and thermal management.
The transistor exhibits a low on-resistance (Rds(on)) of 1.2 milliohms, reducing power losses during conduction phases. With a maximum power dissipation rating of 81 watts, it is capable of handling significant thermal loads, while the wide operating temperature range from -55°C to 175°C ensures stable performance across industrial and automotive environments.
The typical gate charge of 80 nanocoulombs allows precise and predictable switching behavior, and a maximum gate-source voltage of 20 volts guides proper driving voltages for gate control. This device complies with the stringent AEC-Q101 automotive standard, confirming its suitability for vehicle electronic power modules.
RoHS compliance guarantees adherence to environmental standards limiting hazardous substances.
Applications include use in high-voltage traction inverter stages, automotive battery management systems, industrial motor drives, and high-current DC-DC converters. The TO-263 package supports effective PCB thermal dissipation and heatsink integration for enhanced reliability.
Supports continuous current up to 400 amps for heavy-load switching applications. High voltage rating of 800 volts for demanding power conversion tasks. Low on-resistance of 1.2 milliohms reduces conduction power loss. Maximum power dissipation of 81 watts enables sustained operation under high load.
Operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Typical gate charge of 80 nanocoulombs allows predictable switching. Maximum gate-source voltage of 20 volts for secure gate drive control.
Complies with automotive standard AEC-Q101 suitable for vehicle applications. RoHS compliant, meeting environmental and hazardous substance restrictions. Discover more semiconductor power solutions by browsing our Electronics & Electricals categories at EnvMart.
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