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onsemi Type P-Channel MOSFET 120 mA 60 V Enhancement 3-Pin SOT-23 NDS0605

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onsemi Type P-Channel MOSFET 120 mA 60 V Enhancement 3-Pin SOT-23 NDS0605

Name: onsemi Type P-Channel MOSFET 120 mA 60 V Enhancement 3-Pin SOT-23 NDS0605
Brand: onsemi
SKU: 207611
Price: 0.15 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	NDS0605
Width	1.3mm
Mount Type	Surface
Series	NDS0605
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	120mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1.8nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.5V

Key Features

Enhancement mode P-Channel MOSFET designed for efficient switching applications.
Features high-density DMOS technology for low on-state resistance.
Maximum power dissipation rated at 360 mW ensuring reliable performance.
Compact SOT-23 package with 3 pins facilitates surface mounting.
Operates across temperature range from -55°C to 150°C for versatile environments.
Typical gate charge of 1.8 nC enabling fast switching.
Maximum gate-source voltage is ±20 V allowing safe gate drive operation.
Low forward voltage drop of -1.5 V improves efficiency in power management.

Product Description

onsemi NDS0605 Type P-Channel MOSFET is an enhancement mode transistor in a compact 3-pin SOT-23 package delivering a maximum continuous drain current of 120 mA and maximum drain-source voltage of 60 V. It is manufactured using ON Semiconductor's proprietary high cell density DMOS technology that minimizes on-state resistance, making it ideal for high-efficiency, rugged, and reliable fast switching applications.

This device supports surface mount technology and is designed to withstand operating temperatures from -55°C to 150°C, making it suitable for industrial and commercial circuits requiring dependable switching elements.

Key electrical characteristics include a typical gate charge of 1.8 nC at Vgs, a maximum power dissipation of 360 mW, and a maximum gate-source voltage rating of ±20 V, ensuring robust gate control and device longevity. The SOT-23 form factor with dimensions approximately 2.92 mm length, 1.3 mm width, and 930 μm height provides a small footprint ideal for compact PCB designs.

Applications of the onsemi NDS0605 MOSFET include load switching, DC/DC converters, battery protection circuits, power management control, and DC motor control systems. It is well-suited to discrete semiconductor roles in embedded electronics and power regulation systems commonly found in industrial and consumer electronics.

Enhancement mode P-Channel MOSFET for high-density and low resistance switching. Surface mount SOT-23 package facilitates compact design integration. Wide operating temperature range enables use in harsh environments. Reliable performance with a maximum power dissipation of 360 mW.

Low gate charge allows fast switching and high efficiency.

This product is ideal for engineers and designers requiring a dependable, small-signal P-Channel MOSFET with precise electrical characteristics for power management and switching applications in commercial, industrial, and automotive environments.

Browse the Electronics & Electricals category on EnvMart for more discrete semiconductors and MOSFET options from leading manufacturers like onsemi.