onsemi N-Channel MOSFET 6.3A 30V Enhancement Mode 3-Pin SOT-223 Package FDT439N

The onsemi FDT439N is an enhancement mode N-channel MOSFET designed using proprietary high-cell density DMOS technology. It is optimized to deliver efficient power switching with reduced conduction losses. This device is housed in a 3-pin SOT-223 surface mount package with dimensions 6.5mm (length) x 3.56mm (width) x 1.6mm (height), making it appropriate for compact electronic designs.

Operating with a maximum continuous drain current of 6.3A and a drain-source voltage rating of 30V, the FDT439N suits applications requiring reliable low-voltage switching performance. It supports a maximum power dissipation of 3W, and its device characteristics ensure rugged operation over a wide temperature range from -55°C to 150°C.

The MOSFET features a typical gate charge of 15nC at gate-source voltage and an on-state resistance of 0.072 ohms, facilitating fast and efficient switching. Its gate-source voltage tolerance of ±8V protects the transistor gate from voltage spikes. The device exhibits a forward voltage drop of 1.2V, improving conduction efficiency in circuit applications.

This MOSFET is ideal for use in power management circuits, DC/DC converters, switching regulators, and other industrial and commercial electronic equipment. Its surface mount design allows easy integration into automated PCB assembly for modern electronics manufacturing.

Product contains no automotive certification and adheres to general semiconductor standards. It is designed and manufactured as a new item with quality assurance by onsemi. Supports a maximum continuous drain current of 6.3A ensuring reliable power handling.

Operates with a maximum drain-source voltage of 30V suitable for low voltage circuits. Features a low on-state resistance of 0.072 ohms minimizing power loss. Comes in a compact 3-pin SOT-223 surface mount package measuring 6.5mm in length.

Tolerates operating temperatures from -55°C up to 150°C for extended thermal performance. Offers fast switching capabilities with a typical gate charge of 15nC at Vgs. Maximum power dissipation rating of 3W to handle moderate power loads.

Maximum gate-source voltage of ±8V ensuring safe gate drive levels. Includes a forward voltage drop of 1.2V to optimize conduction efficiency. Discover more innovative semiconductor and electronic components by exploring EnvMart's comprehensive MOSFET category and trusted onsemi brand offerings.