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Infineon iPB Type N-Channel MOSFET 273A Continuous Drain Current 100V TO-263 IPB017N10N5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB017N10N5ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 7 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low on-resistance minimizes conduction losses and enhances efficiency.
- High power dissipation of 81W supports robust power throughput.
- Typical gate charge of 80nC enables responsive switching performance.
- Operating temperature range from -55°C to 175°C for wide industrial applications.
- Surface mount TO-263 package facilitates direct PCB mounting and effective heat dissipation.
- Maximum gate-source voltage rating of 20V allows flexible gate drive voltage.
- Forward voltage is 1.2V ensuring low voltage drop during conduction.
- Ideal for high-current DC-DC converters and synchronous rectification applications.
Product Description
Infineon IPB017N10N5ATMA1 is a high-current N-channel MOSFET designed specifically for demanding industrial and power conversion applications. This device supports a maximum continuous drain current of 273A and a drain-source voltage up to 100V.
The MOSFET comes in a TO-263 surface-mount package, which helps in efficient thermal management by allowing direct PCB mounting with low thermal resistance heat sinking paths. It features a low drain-source on-resistance of 1.7mΩ, which significantly reduces conduction losses, improving overall efficiency in power devices.
Designed to operate over a wide temperature range from -55°C to 175°C, it is suitable for environments requiring robust performance and thermal resilience. The device supports a typical gate charge of 80nC at Vgs allowing for fast switching capabilities while the maximum gate-source voltage of 20V offers flexible gate drive voltages.
This MOSFET is ideal for high-current DC-DC power converters and synchronous rectification in power supplies. It also finds use in motor-drive half-bridge stages, server and telecom power rails, battery-management, and inverter systems. Although this part is not automotive standard compliant, it complies with RoHS environmental directives.
Low on-resistance for minimal conduction losses. High continuous drain current for sustained heavy load operation. Compact TO-263 package with surface mount design. Wide operational temperature range for industrial use. Flexible gate drive with 20V rating and responsive switching.
RoHS compliance ensures environmental safety. Explore more power semiconductor components on EnvMart for industrial and electronic applications.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPB017N10N5ATMA1 is 273A.
This model supports a maximum drain-source voltage of 100V.
It comes in a TO-263 surface-mount package, facilitating efficient thermal management.
The operating temperature range is from -55°C to 175°C, suitable for various industrial applications.
The typical gate charge at Vgs is 80nC, enabling responsive switching performance.
The maximum power dissipation for this model is 81W, supporting robust power throughput.
It features a low drain-source on-resistance of 1.7mΩ, which minimizes conduction losses.
The maximum gate-source voltage rating is 20V, allowing for flexible gate drive voltage.
This MOSFET is ideal for high-current DC-DC converters, synchronous rectification, and motor-drive half-bridge stages.
The forward voltage is 1.2V, ensuring a low voltage drop during conduction.
The TO-263 package has 7 pins.
Yes, it complies with RoHS environmental directives.
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