onsemi PowerTrench Type P-Channel MOSFET, 10 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount FDS6575

onsemi model FDS6575 is a PowerTrench Type P-Channel MOSFET designed for efficient power switching applications. It offers a continuous drain current capacity of 10 A and can withstand drain-source voltages up to 20 V. Packaged in a surface mount 8-pin SOIC format, it is ideal for compact electronic designs.

This MOSFET features a shielded-gate structure that ensures a low figure of merit (FOM) by minimizing gate charge and reverse recovery charge, enhancing switching speed and reducing power loss. The device's low typical gate charge of 74nC facilitates swift switching, optimizing system efficiency for synchronous rectification in AC/DC power supplies and other power management circuits.

The enhancement-mode channel provides reliable performance with a maximum power dissipation of 2.5 W and operating temperature ratings from -55°C minimum up to 175°C maximum, making it suitable for demanding industrial and commercial environments.

With dimensions of 5 mm length, 4 mm width, and 1.5 mm height, the MOSFET is well suited for surface mount technology applications where space and thermal management are critical. Its low 17 mΩ maximum drain-source resistance improves conduction efficiency, contributing to overall system power savings.

The maximum gate-source voltage rating of ±8 V and a forward voltage of 1.2 V provide robust control and switching capability. This device is a preferred choice for engineers designing power supplies, motor controls, and industrial automation circuits requiring tight control and high reliability.

Features a shielded-gate structure for reduced losses and faster switching. Compact 8-pin SOIC package facilitates surface mounting in dense PCB layouts. Wide operating temperature range supports harsh industrial operations.

Low typical gate charge to improve power efficiency in switching applications. Robust maximum continuous drain current for high power applications. Low on-resistance ensures minimal conduction losses. Designed for synchronous rectification and efficient power conversion.

Durable electrical characteristics suitable for long life cycles.

Category: Electronics & Electricals, Semiconductor, Power MOSFET. The FDS6575 complements the onsemi lineup of power semiconductor devices, offering reliable performance for diverse industrial, commercial, and laboratory electronic systems. Explore more Power MOSFET and semiconductor solutions on EnvMart.