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onsemi PowerTrench N-Channel MOSFET, 12 A Continuous Drain Current, 60 V Drain Source Voltage, 2.5 W Dissipation FDS5672

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onsemi PowerTrench N-Channel MOSFET, 12 A Continuous Drain Current, 60 V Drain Source Voltage, 2.5 W Dissipation FDS5672

Name: onsemi PowerTrench N-Channel MOSFET, 12 A Continuous Drain Current, 60 V Drain Source Voltage, 2.5 W Dissipation FDS5672
Brand: onsemi
SKU: 207547
Price: 1.44 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	FDS5672
Width	4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	10mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	34nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

The device utilizes PowerTrench technology for efficient switching performance.
Maximum power dissipation is rated at 2.5 W, suitable for compact circuits.
Enhancement channel mode supports reliable operation with low Rds(on) of 10 mΩ.
Typical gate charge is 34 nC ensuring fast switching capability.
Wide operating temperature range from -55°C to 150°C enables industrial use.
Compact package dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
Maximum gate-source voltage tolerance is ±20 V for robust gate drive.
Surface mount SOIC package with 8 pins facilitates easy PCB integration.

Product Description

The onsemi FDS5672 is a PowerTrench N-Channel MOSFET designed for low voltage power switching applications, offering a continuous drain current of 12 A and a maximum drain-source voltage of 60 V. Packaged in an 8-pin SOIC surface mount format, it is engineered for compact footprint and efficient thermal management with a maximum power dissipation of 2.5 W.

This enhancement mode device features a low maximum drain-source resistance (Rds(on)) of 10 mΩ, ensuring minimal conduction losses and high efficiency. The typical gate charge of 34 nC supports fast switching speeds making it suitable for high frequency industrial electronics, power management circuits, and DC-DC converters.

Operating reliably over a temperature range from -55°C to 150°C, the FDS5672 withstands harsh operating conditions common in industrial and aerospace electronics. Its robust maximum gate-source voltage specification of -20 V to +20 V provides flexibility and protection in various drive scenarios.

The device dimensions (5 mm length x 4 mm width x 1.5 mm height) ensure a small footprint for dense PCB layouts, while the 8-pin SOIC package supports easy surface mount assembly and integration into automated manufacturing processes.

Employs PowerTrench technology for improved switching performance and efficiency. Supports continuous drain current up to 12 A for demanding power applications. Low on-resistance reduces energy loss during conduction phases.

Wide operating temperature specifications enhance reliability in industrial environments. Compact and robust SOIC package suitable for surface mounting. Typical gate charge optimized for fast switching and improved energy efficiency.

Maximum gate-source voltage tolerance enhances device durability. Applications include industrial power management, signal amplification, and switching circuits. This product is ideal for engineers and designers seeking a reliable power MOSFET for advanced electronics requiring efficient power control and signal switching.

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