World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi PowerTrench Type P-Channel MOSFET 1.3 A 30 V Enhancement 3-Pin SOT-23 FDN352AP

Free Delivery in India | Lowest Global Shipping Charges

onsemi PowerTrench Type P-Channel MOSFET 1.3 A 30 V Enhancement 3-Pin SOT-23 FDN352AP

Name: onsemi PowerTrench Type P-Channel MOSFET 1.3 A 30 V Enhancement 3-Pin SOT-23 FDN352AP
Brand: onsemi
SKU: 207535
Price: 0.39 USD
Availability: InStock



Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.92mm
Model	FDN352AP
Width	1.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	180mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	-1.2V

Key Features

Features a low maximum drain-source resistance of 180 mΩ for efficient switching.
Employs PowerTrench technology optimized for enhanced system efficiency and power density.
Supports a wide operating temperature range from -55°C to 150°C.
Includes a shielded-gate structure for improved charge balance and reduced figure of merit.
Designed with a soft reverse recovery body diode to eliminate snubber circuits in power supply applications.
Typical gate charge is 1.4 nC at Vgs, enabling fast switching performance.
Maximum power dissipation rating of 500 mW for reliable operation.
Suitable for surface mount applications in electronic and power management systems.

Product Description

onsemi FDN352AP PowerTrench Type P-Channel MOSFET is a compact and efficient semiconductor device designed for power switching applications. Rated at a maximum continuous drain current of 1.3 A and a drain-source voltage of 30 V, this enhancement mode MOSFET is housed in a 3-pin SOT-23 surface mount package, making it ideal for space-constrained electronic circuits.

The PowerTrench® technology integrated into this MOSFET provides low on-resistance and improved switching performance by utilizing a shielded-gate design. This results in a lower figure of merit compared to previous generations, enhancing overall system efficiency.

The device features a soft reverse recovery body diode, reducing the need for additional snubber circuits or higher voltage ratings in MOSFET replacements. Typical gate charge of 1.4 nC at the gate-source voltage ensures rapid switching capabilities vital in synchronous rectification of AC/DC power supplies and other power management applications.

Operating reliably across a temperature range from -55°C to 150°C, the FDN352AP is suitable for demanding industrial, commercial, and automotive environments. Its package dimensions measure 2.92 mm in length, 1.4 mm in width, and a height of 940 μm, enabling high-density mounting on printed circuit boards.

Compact 3-pin SOT-23 surface mount package. Maximum continuous drain current of 1.3 A at 30 V drain-source voltage. Enhanced switching with PowerTrench technology and low on-resistance. Soft body diode eliminates snubber circuits.

Wide operating temperature from -55°C to 150°C. Typical gate charge of 1.4 nC enables fast switching. Maximum power dissipation of 500 mW. Precision package dimensions for PCB integration.

This MOSFET is widely utilized in electronic components, power supplies, and semiconductor applications within the industrial and commercial sectors. It offers reliable performance and efficient power management suitable for both new designs and upgrades. Find accurate and trusted electronic components like this onsemi FDN352AP MOSFET at EnvMart.

Explore more products in our Power MOSFET category.