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onsemi N-Channel Enhancement MOSFET 220 mA, 50 V, 3-Pin SOT-23 BSS138

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onsemi N-Channel Enhancement MOSFET 220 mA, 50 V, 3-Pin SOT-23 BSS138

Name: onsemi N-Channel Enhancement MOSFET 220 mA, 50 V, 3-Pin SOT-23 BSS138
Brand: onsemi
SKU: 207533
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	BSS138
Width	1.3mm
Mount Type	Surface
Series	BSS138
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101, AEC-Q200, AEC-Q100
Channel Type	N
Maximum Continuous Drain Current Id	220mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	3.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1.7nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	800mV

Key Features

Enhancement mode N-Channel MOSFET designed for surface mount applications.
Maximum continuous drain current of 220 mA ensures efficient switching performance.
Low drain-source resistance of 3.5 ohms minimizes power loss during operation.
Maximum power dissipation rating of 360 mW supports robust device operation.
Wide operating temperature range from -55°C up to 150°C ensures versatility in varied environments.
Typical gate charge of 1.7 nC at Vgs indicates low input capacitance for faster switching.
Designed to meet automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.
Maximum gate-source voltage of ±20 V prevents unwanted gate damage.

Product Description

onsemi BSS138 is a high-quality enhancement mode N-Channel MOSFET in a compact 3-pin SOT-23 surface-mount package. It features a maximum continuous drain current of 220 mA and a maximum drain-source voltage of 50 V, making it suitable for a range of low-power switching applications in industrial, automotive, and consumer electronics.

The device is fabricated using advanced high cell density DMOS technology, minimizing on-state resistance to deliver energy-efficient switching and reduced power loss. Its low typical forward voltage of 800 mV further improves overall efficiency.

The small footprint dimensions of 2.92 mm length, 1.3 mm width, and 930 µm height facilitate compact PCB designs, essential for modern electronics requiring miniaturization. Its maximum power dissipation of 360 mW enables stable operation under various load conditions, and the operating temperature range between -55°C and 150°C ensures reliable performance in demanding environments.

Typical gate charge of 1.7 nC enables fast switching speeds with minimal drive current. The device supports a maximum gate-source voltage of ±20 V to protect the gate oxide during transient events. It complies with automotive standards AEC-Q101, AEC-Q200, and AEC-Q100, underscoring its suitability for automotive grade and other high-reliability applications.

This MOSFET is ideal for use in low voltage DC loads, power management circuits, load switching, and general-purpose amplification roles in electronics manufacturing and repair. Enhancement mode N-Channel MOSFET for switching and amplification.

Compact surface mount SOT-23 3-pin package for space-saving designs. Maximum continuous drain current: 220 mA with low on-resistance. Extended temperature operation from -55 to 150 degrees Celsius. Automotive-grade certifications for robust applications.

Low gate charge for fast switching and energy efficiency. Wide gate-source voltage tolerance at minus 20 to plus 20 volts. EnvMart offers this reliable onsemi BSS138 MOSFET for applications requiring low power switching with automotive and industrial quality standards.