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onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement Mode, 3-Pin TO-220 NTPF082N65S3F
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 16.12mm |
| Length | 10.63mm |
| Model | NTPF082N65S3F |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET features ultra-low gate charge for efficient switching performance.
- It supports a maximum power dissipation of 48 watts to handle demanding applications.
- The device operates reliably across a wide temperature range from -55°C to 150°C.
- Its low Rds(on) resistance of 82 milliohms minimizes conduction losses.
- The 3-pin through hole package allows easy mounting and integration into power systems.
- Optimized capacitance and robust body diode improve overall system reliability.
- Suitable for telecommunications, industrial, and power supply applications.
- Designed to withstand high dv/dt rates ensuring durability under switching stresses.
Product Description
onsemi NTPF082N65S3F is a high voltage Type N-Channel MOSFET designed with super-junction technology to provide outstanding low on-resistance and gate charge performance. Housed in a TO-220 3-pin through hole package, this MOSFET supports continuous drain currents up to 40 A and a drain-source voltage of 650 V, making it ideal for a range of power electronics applications.
This device features an enhancement mode channel, enabling efficient switching with minimal conduction losses. It offers a typical gate charge of 70 nC at Vgs and a maximum power dissipation rating of 48 W, ensuring robust performance in demanding environments.
The MOSFET operates over a wide temperature range (-55°C to 150°C), suitable for industrial and telecommunications equipment, cloud systems, solar inverters, UPS, and EV chargers. Its low effective output capacitance and excellent body diode characteristics reduce switching losses and improve system efficiency.
Ultra Low Gate Charge allows for faster switching and reduced power consumption. Low Rds(on) resistance enhances conduction efficiency. Robust body diode performance for higher reliability. Through hole TO-220 package facilitates easy PCB integration and cooling.
Wide operating temperature range accommodates harsh industrial environments. Optimized capacitance supports high frequency applications. Highly suitable for telecom power and server power applications.
Country of origin is China. The NTPF082N65S3F MOSFET from onsemi delivers reliable, high-performance switching technology for industrial, telecommunications, and power management sectors.
Explore more power semiconductor components like MOSFETs, IGBTs, and Rectifiers in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
It can handle a maximum drain-source voltage of 650 V.
The maximum power dissipation rating is 48 W.
The typical gate charge at Vgs is 70 nC.
The low Rds(on) resistance is 82 milliohms.
It operates reliably across a temperature range from -55°C to 150°C.
This model is housed in a TO-220 package type.
It has a 3-pin configuration.
This model features a Type N channel.
It uses a through hole mounting type for easy integration.
It is suitable for telecommunications, industrial, and power supply applications.
The forward voltage is 1.3 V.
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