$0.52
$0.50
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi PowerTrench Type P-Channel MOSFET 4 A 30 V Enhancement 6-Pin SOT-23 FDC658P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC658P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- PowerTrench MOSFET technology optimizes system efficiency and power density.
- Device features low gate charge and soft body diode for fast switching.
- Enhancement mode transistor suitable for surface-mount applications.
- Maximum power dissipation of 1.6 W supports reliable performance.
- Operates within temperature range from -55°C to 150°C.
- Maximum gate-source voltage rating of -20 V to +20 V.
- Low on-resistance of 50 mΩ reduces conduction losses.
- Typical gate charge of 8 nC ensures efficient switching.
Product Description
onsemi FDC658P PowerTrench Type P-Channel MOSFET is a high-performance transistor designed for various electronic applications requiring efficient power switching with low losses. The device supports a maximum continuous drain current of 4 A and a drain-source voltage of 30 V. It is housed in a compact 6-pin SOT-23 surface-mount package, facilitating easy integration into electronic circuits.
Constructed using PowerTrench technology, this MOSFET offers an advanced shielded-gate structure that enhances charge balance, resulting in a significantly improved figure of merit (FOM) compared to previous generations. This technology provides fast switching speeds due to low gate charge and soft reverse recovery body diode characteristics.
This enhancement-mode device operates reliably across a wide temperature range from -55°C minimum to 150°C maximum, making it suitable for demanding industrial and commercial electronics, including power management, voltage regulation, and synchronous rectification in AC/DC power supplies.
The FDC658P features a very low on-state resistance of 50 mΩ which reduces conduction losses and maximizes efficiency in power switching applications. With a typical gate charge of 8 nC and a maximum gate-source voltage rating of ±20 V, the device supports effective gate drive control.
Dimensions are compact at 3 mm length, 1.7 mm width, and 1 mm height, optimized for space-constrained layouts. The MOSFET is RoHS compliant and designed without specific automotive certification, focusing on general-purpose electronics.
PowerTrench technology enhances efficiency and system power density. Low gate charge and soft body diode enable fast switching and minimize losses. Compact 6-pin SOT-23 surface-mount package. 4 A maximum continuous drain current and 30 V maximum drain-source voltage.
Wide operating temperature range from -55°C to +150°C. Low on-resistance of 50 mΩ for reduced power dissipation. Typical gate charge of 8 nC at Vgs, supporting quick gate transitions. Maximum gate-source voltage of ±20 V for robustness.
Suitable for use in industrial power supplies, consumer electronics, and other electronic control systems requiring efficient and reliable power switching. Explore more PowerTrench MOSFETs and semiconductor solutions to meet your design requirements on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge is 8 nC at Vgs.
This model features a low on-resistance of 50 mΩ.
It operates within a temperature range from -55°C to 150°C.
The FDC658P is housed in a 6-pin SOT-23 surface-mount package.
The maximum power dissipation is 1.6 W.
The maximum gate-source voltage rating is -20 V to +20 V.
The dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.
It uses a P-channel type channel.
This MOSFET is suitable for applications including power management, voltage regulation, and synchronous rectification in AC/DC power supplies.
Yes, the FDC658P is RoHS compliant.
Related Products
Other Products from this brand
$6.86
$6.66
-3%
New
$0.97
$0.94
-3%
New
$0.06
$0.06
-3%
New
Recently Viewed Products
$0.52
$0.50
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent