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DiodesZetex P-Channel MOSFET, 35 mA Continuous Drain Current, 200 V Drain Source Voltage, Enhancement Mode ZVP1320FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZVP1320FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 35mA |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 80Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET features an enhancement channel mode for enhanced control and reduced power losses.
- Maximum power dissipation is 330 mW, suitable for low power semiconductor applications.
- Operating temperature ranges from -55°C to 150°C, allowing for robust environmental performance.
- Surface mount SOT-23 package with 3 pins enables easy integration into automated assembly processes.
- Maximum gate source voltage of -20 V to +20 V allows flexible drive voltages.
- Robust maximum drain source resistance of 80 Ω ensures efficient switching characteristics.
- The device meets automotive standard AEC-Q101, assuring reliability for automotive electronic applications.
Product Description
DiodesZetex ZVP1320FTA is a P-Channel MOSFET transistor designed for discrete semiconductor applications requiring precise switching and control. This device supports a maximum continuous drain current of 35 mA and a maximum drain source voltage of 200 V, suitable for low power electronic circuits.
The enhancement mode operation provides efficient transistor performance with minimum power loss. Its compact 3-pin SOT-23 package allows easy surface mounting on PCBs, ideal for automated manufacturing and miniaturized circuit designs.
Operating temperature range from -55°C to 150°C ensures reliable functioning under diverse environmental conditions encountered in industrial, automotive, and consumer electronics.
Physical dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height contribute to space-saving circuit layouts. This MOSFET features an enhancement channel mode for controlled and reliable transistor operation. Maximum power dissipation of 330 mW allows stable operation without thermal overload.
Maximum gate source voltage rating of -20 V to +20 V accommodates various driving voltages. Surface mount SOT-23 package simplifies installation in automated assembly lines. Compliance with AEC-Q101 automotive standards ensures high reliability in automotive and industrial applications.
The device offers a maximum drain source resistance of 80 Ω enhancing switching efficiency. Wide temperature range supports applications in harsh environmental conditions.
These characteristics make the DiodesZetex ZVP1320FTA MOSFET an ideal choice for industrial, automotive electronics, power management systems, and consumer electronic devices requiring compact, low power, and reliable semiconductor switching elements.
Explore more DiodesZetex semiconductors and MOSFET components at EnvMart for advanced electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 mA.
The maximum drain source voltage is 200 V.
It operates within a temperature range of -55°C to 150°C.
The MOSFET comes in a surface mount SOT-23 package.
The maximum power dissipation is 330 mW.
The maximum gate source voltage is rated at -20 V to +20 V.
The dimensions are 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
The maximum drain source resistance is 80 Ω.
It meets the AEC-Q101 automotive standard.
This model has a pin count of 3.
It is a P-channel MOSFET.
This model is suitable for low power electronic circuits, automotive electronics, and power management systems.
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