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Nexperia N-Channel MOSFET, 5.1 A, 30 V Enhancement, 3-Pin SOT-23 PMV45EN2

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Nexperia N-Channel MOSFET, 5.1 A, 30 V Enhancement, 3-Pin SOT-23 PMV45EN2

Name: Nexperia N-Channel MOSFET, 5.1 A, 30 V Enhancement, 3-Pin SOT-23 PMV45EN2
Brand: Nexperia
SKU: 205700
Price: 0.14 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV45EN2
Width	1.4mm
Mount Type	Surface
Series	PMV45EN2
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	5.1A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	42mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	3.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

The 3-pin SOT-23 surface-mount package ensures compact integration in circuit designs.
Features a low maximum drain-source resistance of 42 mΩ for efficient conduction.
Supports an operating temperature range from -55°C to 150°C.
Maximum power dissipation is rated at 5 W for robust performance.
Typical gate charge of 3.6 nC allows for fast switching speeds.
Designed with an enhancement mode channel for controlled operation.
Maximum gate-source voltage rating of -20 V to +20 V for reliability.
Forward voltage drop is 1.2 V at normal operating conditions.

Product Description

Nexperia PMV45EN2 is an N-Channel MOSFET optimized for power management and switching in a variety of industrial, automotive, and consumer electronics applications. Featuring a maximum continuous drain current of 5.1 A and a drain-source voltage of 30 V, this device ensures robust performance under demanding conditions.

The 3-pin SOT-23 package provides a compact footprint suitable for surface mounting on printed circuit boards, enabling space-saving design without compromising thermal management. With a low drain-source resistance of 42 mΩ, the MOSFET minimizes power losses, improving efficiency in power supply circuits and motor controls.

Operating over a wide temperature range of -55°C to 150°C, the PMV45EN2 supports reliability in harsh environments. Its maximum power dissipation rating of 5 W allows for sustained operation in high-load conditions. The device’s typical gate charge of 3.6 nC ensures fast switching transitions, crucial for high-frequency applications.

This Nexperia MOSFET utilizes an enhancement-mode channel, which provides stable and predictable switching behavior. The gate-source voltage is limited to between -20 V and +20 V to protect the device in typical deployment scenarios.

Dimensional specifications include a length of 3 mm, width of 1.4 mm, and a height of 1 mm, making it compatible with dense electronic assemblies. A typical forward voltage drop of 1.2 V further denotes its electrical characteristics for design engineers.

Typical use cases include power supplies, load switches, DC/DC converters, and motor drive circuits in industrial, automotive, and electronic manufacturing sectors. The product complements other semiconductor components in sophisticated system design.

Compact size and surface-mount technology facilitate automated assembly processes. High reliability ensures long service life in critical applications. This product listing enables engineers and procurement specialists to source a high-quality MOSFET from a recognized semiconductor brand with trusted electrical characteristics.