$3.36
$3.26
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay N-Channel MOSFET 120 A 100 V Enhancement 3-Pin TO-263 SUM70040E-GE3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 4.82mm |
| Length | 9.65mm |
| Model | SUM70040E-GE3 |
| Width | 10.41mm |
| Mount Type | Surface |
| Series | SUM70040E |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features a 3-pin TO-263 surface mount package suitable for compact PCB layouts.
- Has a low maximum drain source resistance of 4.6 milliohms for efficient conduction.
- Supports a maximum power dissipation of 375 W enabling high power operation.
- Operates within a wide temperature range from -55°C to 175°C for industrial reliability.
- Typical gate charge is 76 nC at Vgs, ensuring fast switching performance.
- Maximum gate-source voltage rating is -20 to +20 V to protect the gate oxide.
- Compact device dimensions of 9.65 mm length, 10.41 mm width, and 4.82 mm height.
- Manufactured in Taiwan, Province Of China, ensuring quality semiconductor processes.
Product Description
Vishay SUM70040E-GE3 is an N-Channel Enhancement Mode MOSFET designed for robust power switching and amplification in industrial and electronic circuits. It supports a continuous drain current of 120 A and a maximum drain-source voltage of 100 V, catering to applications requiring efficient current control.
This high-power device comes in a 3-pin TO-263 surface mount package, making it suitable for compact and automated PCB assembly processes. Its low on-resistance of 4.6 milliohms minimizes conduction losses, improving overall circuit efficiency.
The MOSFET can dissipate up to 375 W, enabling it to operate effectively in demanding power conditions. It is rated for a wide operating temperature range from -55°C up to 175°C, ensuring reliability in harsh industrial environments.
With a typical gate charge (Qg) of 76 nC at gate-source voltage, it delivers fast switching capabilities essential for high-frequency applications. The gate-source voltage maximum of -20 V to +20 V safeguards gate integrity against voltage spikes.
Device dimensions are compact, with a length of 9.65 mm, width of 10.41 mm, and height of 4.82 mm, facilitating space-efficient layouts. This part is manufactured in Taiwan, Province Of China, adhering to strict semiconductor quality standards.
Features a 3-pin TO-263 package compatible with surface mount technology. Maximum continuous drain current of 120 A supports high power loads. Low drain-source resistance reduces conduction energy loss. Wide operating temperature range for rugged industrial applications.
Fast switching enabled by optimized gate charge characteristics. High power dissipation capacity of 375 W for demanding tasks. Compact size suitable for dense PCB designs.
This MOSFET is ideal for industrial control systems, power management in electronic devices, automotive electronics, and other applications requiring reliable high current switching. Vishay's SUM70040E-GE3 ensures consistent performance and long operational life in various environments.
Explore more high-quality MOSFETs and discrete semiconductor products in the Electronics & Electricals category at EnvMart for your industrial and commercial projects.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
It supports a maximum drain-source voltage of 100 V.
This model comes in a TO-263 surface mount package.
The typical gate charge is 76 nC at gate-source voltage.
It has a maximum power dissipation capacity of 375 W.
The operating temperature range is from -55°C to 175°C.
The dimensions are 9.65 mm in length, 10.41 mm in width, and 4.82 mm in height.
The maximum gate-source voltage rating is -20 V to +20 V.
The maximum drain-source resistance is 4.6 milliohms.
It features an N-channel enhancement mode.
This MOSFET is manufactured in Taiwan, Province Of China.
This model is suitable for industrial control systems, power management in electronic devices, and automotive electronics.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$0.30
$0.29
-3%
New
Recently Viewed Products
$3.36
$3.26
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent