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Vishay N-Channel MOSFET 100A 25V Enhancement SO-8 Package SIDR220DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.25mm |
| Model | SIDR220DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiDR220DP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 0.58mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 200nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.1V |
Key Features
- N-Channel MOSFET with 100A maximum drain current and 25V maximum drain-source voltage.
- SO-8 surface mount package for compact PCB integration.
- TrenchFET Gen IV technology enhances switching efficiency and reduces power loss.
- Maximum power dissipation of 125W enables robust thermal performance.
- Operating temperature range from -55°C to 150°C suitable for industrial environments.
- Low drain-source resistance (Rds) of 0.58mΩ minimizes conduction losses.
- Typical gate charge Qg @ Vgs of 200nC for fast switching capability.
- 8-pin configuration supports versatile circuit design.
Product Description
The Vishay SIDR220DP-T1-RE3 is a high-performance N-Channel MOSFET designed for demanding power management and switching tasks in modern electronic systems. With a robust maximum continuous drain current of 100A and a maximum drain-source voltage of 25V, this device provides ample capacity for applications that require efficient handling of significant power loads.
This MOSFET utilizes TrenchFET Gen IV advanced technology, optimizing key parameters such as gate charge, gate-to-drain charge ratio, and switching capabilities to effectively minimize power losses during operation. Its enhancement mode channel delivers reliable on/off control, and the SO-8 package format supports convenient surface-mount assembly for automated PCB manufacturing.
The device achieves a very low drain-source resistance (Rds) of just 0.58mΩ, significantly reducing conduction losses, while its maximum power dissipation rating stands at 125W for robust thermal performance. Operational flexibility is ensured by its wide operating temperature range from -55°C to 150°C, making it suitable for both low-temperature and high-temperature environments.
With a typical gate charge of 200nC and a maximum gate-source voltage of 16V, the SIDR220DP-T1-RE3 supports efficient fast switching, ideal for use in circuits requiring rapid transitions. Additional features include a forward voltage of 1.1V, an 8-pin package providing extensive circuit connectivity, and compatibility with surface-mount technology.
Common applications for this MOSFET include power switching, industrial automation, electronic control systems, and energy management modules in automotive, industrial, and commercial contexts. It is also utilized in battery management, DC-DC converters, and switching power supplies where low conduction losses and reliable thermal performance are critical.
The Vishay SIDR220DP-T1-RE3's combination of high drain current, advanced FET technology, and versatile packaging makes it an excellent choice for professionals in semiconductor design, power electronics, and embedded system engineering.
Explore more MOSFETs in the Electronics & Electricals category and review Vishay's range of advanced semiconductor solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SIDR220DP-T1-RE3 is 100A.
This model has a maximum drain-source voltage rating of 25V.
The SIDR220DP-T1-RE3 comes in an SO-8 surface mount package.
The operating temperature range for this model is from -55°C to 150°C.
The typical gate charge (Qg) at Vgs is 200nC.
The drain-source resistance (Rds) for the SIDR220DP-T1-RE3 is 0.58mΩ.
The maximum power dissipation for this model is rated at 125W.
The forward voltage (Vf) for this MOSFET is 1.1V.
The SO-8 package of this model has 8 pins.
This MOSFET features an enhancement mode N-channel design.
The maximum gate-source voltage (Vgs) for the SIDR220DP-T1-RE3 is 16V.
This MOSFET is suitable for applications in power switching, industrial automation, and energy management modules.
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